Samsung MZWLJ3T8HBLS-0007C 3.84 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-WLJ3T80

Engineer's Note

Compared with the earlier MZ-WLJ3T80, the MZWLJ3T8HBLS-0007C PM1733 leverages a PCIe Gen4 x4 path and Samsung 5th-Gen 9x-Layer V-NAND TLC to deliver up to 7,000/3,800 MB/s and 1,450,000/115,000 IOPS, giving it clearly higher performance headroom for latency-sensitive databases, virtualization, and scale-out analytics. At 3.84 TB with 1 DWPD and 7,008 TBW, it offers a stronger balance of endurance and density than typical read-optimized peers, making it a particularly solid choice for enterprise servers that need sustained mixed-workload performance without stepping up to a higher-cost write-intensive SSD.

Endurance & Reliability

With an endurance rating of 7008 TBW, this SSD is designed to handle a very large amount of data written over its service life, making it far beyond the needs of typical boot, OS, and mainstream enterprise application workloads. In practical terms, for common system-disk use or read-heavy server deployments, this level of endurance provides ample write headroom for long-term, worry-free operation. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving system stability. Its UBER of 1.0E-17 indicates an extremely low unrecoverable bit error rate, which is a key enterprise-class indicator for data integrity and dependable storage performance in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface gives this drive the bandwidth headroom to keep modern dual-socket servers and virtualization clusters fed without becoming a storage bottleneck.
2. Its 7 GB/s-class sequential read performance accelerates large dataset scans, backup restores, and analytics jobs by cutting bulk data access time.
3. With 1.45M-class random read IOPS, it is built to sustain extremely dense VM, OLTP, and metadata-heavy workloads while preserving fast application responsiveness.
4. A 1 DWPD endurance rating makes it a strong fit for read-intensive to mixed enterprise deployments that need predictable lifespan under daily production writes.
5. Samsung 5th-Gen 9x-Layer 3D TLC V-NAND, combined with sub-100 µs typical latency, delivers a balanced mix of capacity efficiency, consistent QoS, and low-latency transaction handling for business-critical systems.

Capacity Sweet

Reference capacities in the same series: lower_capacity: 1.92 TB higher_capacity: 7.68 TB Capacity positioning analysis: At 3.84 TB, this SSD sits in the sweet spot of the product line. Compared with the 1.92 TB version, it gives much better headroom for data growth, denser VM placement, and longer refresh cycles without materially changing the expected enterprise-class sequential throughput or random IOPS profile. Compared with the 7.68 TB model, it typically offers a more attractive cost-per-deployment while avoiding overprovisioning in medium-scale clusters. It is especially well suited for shared storage pools serving roughly 40 to 60 mixed-application virtual machines or mid-sized database nodes.

FAQ