Samsung MZWLJ3T8HBLS 3.84 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-WLR1T90

Engineer's Note

Compared with the previous-generation MZ-WLR1T90, the Samsung PM1733 MZWLJ3T8HBLS steps up to PCIe Gen4 x4 and 3.84 TB capacity, delivering up to 7,000 MB/s sequential read and 1.45M random-read IOPS for materially higher throughput and VM or database consolidation density. Its 5th-Gen 9x-Layer Samsung V-NAND TLC, 1 DWPD endurance, and 7,008 TBW make it a stronger fit for read-intensive enterprise workloads that still require dependable write endurance, while its 3,800 MB/s write performance keeps latency-sensitive transaction paths better balanced than older-generation PCIe drives.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, the MZWLJ3T8HBLS is designed to handle a full drive write per day across its warranty period, which is more than sufficient for typical enterprise OS, boot, virtualization, and read-heavy application workloads. In practical terms, under normal system-disk usage it provides long service life with substantial write headroom, giving buyers confidence that daily operations will not come close to exhausting the drive’s endurance. For enterprise reliability, this SSD includes Power Loss Protection (PLP), which helps preserve in-flight data and metadata during an unexpected power interruption, reducing the risk of corruption and improving system recovery integrity. Its UBER of 1.0E-17 and 2 million-hour MTBF indicate a very low uncorrectable bit error rate and strong long-term dependability, making it a solid choice for business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with top-tier sequential read throughput, accelerates large dataset streaming and sharply reduces boot, restore, and analytics load times in performance-critical servers.
2. With up to 7000 MB/s sequential read speed, this SSD is ideal for read-heavy workloads such as AI model loading, media processing, and high-speed backup ingestion.
3. Delivering 1,450,000 K IOPS in random reads, it sustains massive parallel transaction access for virtualized databases, metadata-intensive storage, and low-latency cloud services.
4. Rated at 1 DWPD, it provides enterprise-grade write endurance for daily full-drive overwrites, making it a reliable fit for mixed-use data center applications with predictable lifecycle planning.
5. Built on Samsung 5th-Gen 9x-Layer 3D TLC V-NAND and tuned for 95 µs typical latency, it combines high density with consistently fast response times for latency-sensitive business workloads.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB In this series, the 3.84 TB model sits at the practical sweet spot. Compared with the 1.92 TB version, it gives much better headroom for OS images, active datasets, and growth, reducing early capacity pressure without changing the typical enterprise performance profile. Compared with the 7.68 TB option, it usually delivers a more attractive cost-to-usable-capacity balance while keeping similar sequential throughput and random IOPS behavior. It is well suited for mid-scale virtualization clusters, such as shared storage for about 40 to 60 mixed-workload virtual machines.

FAQ