Samsung MZWLL1T6HAJQ-00AH3 1.6TB PM1725b NVMe PCIe Gen3 x4 2.5 inch Enterprise Solid State Drive

General

Brand	Samsung
Model	PM1725b
Capacity	1.6TB
Usage Class	Enterprise

Interface

Host Interface	NVMe PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit MLC
Drive Writes Per Day	5
Total Bytes Written	14600 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	2600 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLK1T6HCHP

Engineer's Note

Compared with the predecessor MZWLK1T6HCHP, the MZWLL1T6HAJQ PM1725b delivers a clearer enterprise value balance of capacity density, endurance, and NVMe responsiveness, combining 1.6TB with 5 DWPD / 14,600 TBW and up to 3,300/2,600 MB/s throughput for heavier write-intensive duty cycles. Its Samsung V-NAND 3-bit MLC design and 800,000/160,000 IOPS random performance make it a stronger fit than the prior generation for virtualization clusters, OLTP databases, and mixed enterprise workloads that need both sustained write life and low-latency PCIe Gen3 x4 performance.

Endurance & Reliability

With an endurance rating of 14,600 TBW and 5 DWPD, the MZWLL1T6HAJQ-00AH3 is designed for sustained, write-intensive enterprise workloads and can comfortably handle heavy daily data writes over its service life. In typical use, this level of endurance means it is far beyond the needs of a standard OS or boot drive and can support long-term, high-frequency operation with strong confidence. For enterprise reliability, power loss protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving data integrity. Its UBER of 1.0E-17, together with a 2 million hour MTBF, reflects a very low uncorrectable error rate and strong overall dependability for business-critical storage environments.

Technical Specs & Insights

1. The NVMe over PCIe Gen3 x4 architecture provides a low-overhead, high-bandwidth data path that helps enterprise servers clear storage bottlenecks in virtualization, analytics, and database workloads.
2. Its multi-gigabyte-per-second sequential read capability accelerates large file streaming, backup recovery, and dataset loading for faster application start-up and batch processing.
3. With read performance in the hundreds of thousands of IOPS, the drive is well suited for latency-sensitive OLTP, metadata-heavy systems, and dense VM environments that demand rapid small-block access.
4. The endurance profile supports multiple full-drive rewrites per day, making it a strong fit for write-intensive enterprise use cases such as logging, caching, and mixed-workload transactional platforms.
5. Samsung’s V-NAND TLC design, paired with sub-100-microsecond typical latency, delivers a practical balance of capacity efficiency, predictable responsiveness, and sustained service quality in always-on datacenter deployments.

Capacity Sweet

Lower-capacity reference: 960GB Higher-capacity reference: 1.92TB In this series, the 1.6TB model sits in the sweet spot. Compared with the 960GB version, it gives meaningfully more headroom for OS images, application binaries, logs, and moderate data growth, reducing early capacity pressure in always-on enterprise environments. Compared with the 1.92TB option, it typically delivers a better cost-to-usable-capacity balance while keeping read/write behavior and random IOPS in the same mainstream enterprise class. It is well suited for mid-scale virtualization clusters, such as hosting boot and utility volumes for about 60 to 80 virtual machines.

FAQ