Samsung MZWLL3T2HAJQ-00005 3.2TB PM1725b NVMe PCIe Gen3 x4 2.5 inch Enterprise Solid State Drive

General

Brand	Samsung
Model	PM1725b
Capacity	3.2TB
Usage Class	Enterprise

Interface

Host Interface	NVMe PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3bit MLC (TLC)
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	3500 MB/s
Sequential Write	3200 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLW3T2HMLT

Engineer's Note

Compared with the previous-generation MZWLW3T2HMLT, the Samsung PM1725b 3.2TB (MPN: MZWLL3T2HAJQ-00005) delivers a clear generational step in usable enterprise value by combining NVMe PCIe Gen3 x4 bandwidth up to 3500/3200 MB/s with 800K/160K IOPS and sustained 3 DWPD endurance. Its standout advantage in the same class is the rare mix of very high write life—17,520 TBW—with Samsung V-NAND 3bit MLC (TLC), making it a stronger fit than its predecessor for mixed read/write virtualization, OLTP databases, and latency-sensitive scale-out server workloads.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 3 DWPD, the MZWLL3T2HAJQ-00005 is designed for sustained, write-intensive enterprise use and can comfortably handle being fully written three times per day throughout its rated service life. In typical workloads, this level of endurance is far beyond the demands of an OS or boot drive, meaning it can serve as a system disk for many years with substantial reliability headroom. This model also includes power-loss protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving operational stability. Its 1.0E-17 UBER and 2 million-hour MTBF indicate enterprise-class data integrity and dependability, giving procurement teams added confidence for deployment in business-critical environments.

Technical Specs & Insights

1. The NVMe over PCIe Gen3 x4 architecture provides a low-overhead data path that keeps virtualization clusters, database nodes, and scale-out storage platforms responsive under heavy parallel workloads.
2. With sequential read performance reaching 3500 MB/s, this drive accelerates large-block operations such as analytics scans, backup restores, and rapid dataset loading in enterprise servers.
3. Random read capability of 800,000 K IOPS enables the SSD to sustain extremely dense transaction activity, making it well suited for OLTP databases, metadata-intensive storage, and high-concurrency VM environments.
4. Built on Samsung V-NAND 3bit MLC (TLC) and rated for 3 DWPD, it delivers the write endurance needed for mixed-use enterprise workloads that rewrite data continuously without sacrificing flash density economics.
5. A typical latency of 90 µs helps reduce storage wait time at the application layer, improving QoS consistency for latency-sensitive services such as real-time analytics and business-critical transactional systems.

Capacity Sweet

Lower capacity reference: 1.6TB Higher capacity reference: 6.4TB In this enterprise SSD family, the 3.2TB model sits at the sweet spot for mainstream infrastructure. Compared with the 1.6TB option, it gives much more headroom for VM growth, log retention, and mixed application datasets without forcing early capacity expansion. Compared with the 6.4TB version, it usually delivers the best balance of acquisition cost, usable flash, and near-identical enterprise read/write and IOPS behavior. It is especially well suited for medium-scale virtualization clusters, such as hosting boot and application volumes for roughly 40 to 60 business workloads.

FAQ