Samsung MZWLL3T2HAJQ-000D3 3.2 TB PM1725b PCIe Gen3 x4 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1725b
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	5
Total Bytes Written	29200 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	2900 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL3T2HEHP-00007

Engineer's Note

Compared with the earlier MZWLL3T2HEHP-00007, the PM1725b MZWLL3T2HAJQ-000D3 advances the platform with Samsung V-NAND 3D TLC and a stronger enterprise blend of 3,300/2,900 MB/s sequential performance, 800K/160K IOPS, and 5 DWPD endurance backed by 29,200 TBW. This combination gives it a clear edge over typical PCIe Gen3 x4 drives for write-intensive virtualization, OLTP databases, and mixed-workload cloud nodes where 3.2 TB capacity must also sustain high-duty-cycle reliability.

Endurance & Reliability

With an endurance rating of 29,200 TBW and 5 DWPD, the MZWLL3T2HAJQ-000D3 is built for sustained enterprise write workloads and can comfortably handle intensive daily data updates over its service life. In typical deployment, this level of endurance means it is more than sufficient for demanding system, cache, or mixed-use storage scenarios, providing long-term write headroom with confidence. For enterprise reliability, Power Loss Protection (PLP) helps preserve in-flight data and protects metadata integrity during unexpected power interruptions, reducing the risk of corruption or downtime. Its ultra-low UBER of 1.0E-17, together with a 2 million-hour MTBF, indicates extremely strong data integrity and dependable operational stability for business-critical environments.

Technical Specs & Insights

1. The host interface provides a high-bandwidth, low-overhead data path that keeps enterprise servers fed with storage throughput for virtualization, analytics, and scale-out application stacks.
2. Its strong sequential read capability shortens database backup restores, large dataset scans, and VM image loading, helping reduce application startup and recovery windows.
3. The drive’s exceptional random read performance sustains fast access to small-block data, making it well suited for OLTP databases, metadata-heavy workloads, and high-concurrency cloud environments.
4. This endurance class is built for write-intensive enterprise duty cycles, allowing frequent full-drive rewrites without compromising service life in logging, caching, and transactional platforms.
5. Samsung’s stacked TLC NAND architecture, paired with very low typical latency, delivers a strong balance of capacity efficiency, predictable responsiveness, and dependable QoS for latency-sensitive business applications.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB In this enterprise SSD family, 3.2 TB is the practical sweet spot. Compared with the 1.6 TB model, it gives much better headroom for VM growth, log expansion, and overprovisioning flexibility without changing the expected enterprise-class throughput or IOPS profile. Compared with the 6.4 TB option, it usually delivers a more attractive cost per deployed workload while avoiding unnecessary capacity overspend. That makes 3.2 TB especially well suited for mid-scale virtualization, such as a 10 to 14 node cluster running mixed databases, application volumes, and infrastructure services.

FAQ