Samsung MZWLL3T2HAJQ-000H3 3.2 TB PM1725B PCIe Gen3 x4 U.2 (2.5") Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1725B
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	5
Total Bytes Written	29200 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	2900 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-7LM3T80

Engineer's Note

The Samsung PM1725B 3.2TB (MZWLL3T2HAJQ-000H3) stands out for write-intensive enterprise workloads by combining 5 DWPD endurance, 29,200 TBW, and PCIe Gen3 x4 performance of up to 3,300/2,900 MB/s with 800K/160K random read/write IOPS. Compared with the previous-generation MZ-7LM3T80, the PM1725B brings a clear generational upgrade through Samsung 5th-Gen V-NAND and a stronger balance of throughput, sustained write endurance, and I/O density for virtualization, OLTP, and mixed enterprise databases.

Endurance & Reliability

With an endurance rating of 29,200 TBW and 5 DWPD, the MZWLL3T2HAJQ-000H3 is built for sustained write-intensive enterprise workloads far beyond typical client or light server usage. In practical terms, this level of endurance means that when used as an OS, boot, or general application drive under normal enterprise operating conditions, it can comfortably support many years of service with substantial write headroom. For enterprise reliability, integrated power-loss protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving system integrity. Its ultra-low UBER of 1.0E-17, together with a 2 million hour MTBF, indicates very strong data integrity and dependable long-term operation expected in data center environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface provides a proven low-latency host path that integrates easily into mainstream enterprise servers and removes storage bottlenecks for virtualized and scale-out workloads.
2. With sequential reads up to 3300 MB/s, the drive accelerates large-block data access, reducing wait time for analytics scans, backup restores, and content streaming pipelines.
3. Delivering up to 800K random read IOPS, it sustains fast access to highly fragmented datasets, making it well suited for OLTP databases, VDI boot storms, and metadata-heavy applications.
4. A 5 DWPD endurance rating enables intensive daily overwrite cycles throughout the warranty life, supporting write-heavy enterprise use cases such as logging, caching, and mixed-workload databases.
5. Built on Samsung 5th-Gen 9x-Layer 3D TLC V-NAND and paired with 90 µs typical latency, the drive combines enterprise flash efficiency with consistently quick response times for latency-sensitive services.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB At 3.2 TB, this drive sits in the sweet spot of the family. Compared with the 1.6 TB model, it gives much better headroom for data growth, overprovisioning, and workload consolidation, reducing the risk of early capacity bottlenecks. Compared with the 6.4 TB option, it typically delivers a more attractive cost per deployed node while keeping enterprise-class throughput and IOPS in the same performance band. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for about 40 to 60 mixed-workload virtual machines.

FAQ