Samsung MZWLL3T8HAJQ-000H3 3.84 TB PM1723B PCIe Gen3 x4 U.2 (2.5") Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1723B
Capacity	3.84 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 48-layer 3D TLC
Drive Writes Per Day	3
Total Bytes Written	21024 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	3000 MB/s
Random Read IOPS	800000
Random Write IOPS	140000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL3T8HAJQ-00003

Engineer's Note

Compared with MZWLL3T8HAJQ-00003, the PM1723B MZWLL3T8HAJQ-000H3 advances the platform with Samsung 48-layer 3D TLC V-NAND and a stronger enterprise balance of 3.3/3.0 GB/s sequential throughput plus up to 800K/140K IOPS, giving it better fit for latency-sensitive virtualization and scale-out database nodes. At 3.84 TB with 3 DWPD and 21,024 TBW, it delivers distinctly higher write endurance than typical read-optimized PCIe Gen3 drives in its class, making it a safer choice for mixed-workload servers that need both sustained performance and long service life.

Endurance & Reliability

With an endurance rating of 21,024 TBW and 3 DWPD, the MZWLL3T8HAJQ-000H3 is built for sustained enterprise write-intensive use, allowing the full drive capacity to be written three times per day across its rated service life. In typical server or storage workloads, this level of endurance means it can comfortably handle long-term operation as a system drive or application drive, providing dependable write headroom for many years without endurance concerns. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity in the event of an unexpected power interruption. Its UBER of 1.0E-17 reflects a very low uncorrectable bit error rate for high data integrity, while the 2 million hour MTBF further supports stable, 24/7 deployment in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface, paired with strong sequential read performance, accelerates large-block data movement so analytics clusters, virtualization hosts, and content platforms spend less time waiting on storage.
2. Its high random read capability enables databases and high-concurrency transactional workloads to serve far more small-block requests with consistently faster response under heavy queue depths.
3. A 3 DWPD endurance profile makes it well suited for write-intensive enterprise use cases such as logging, caching, and mixed-workload servers that rewrite data aggressively every day.
4. Samsung V-NAND 48-layer 3D TLC balances enterprise-class capacity efficiency, power characteristics, and reliability, making it a practical fit for dense data center deployments.
5. The typical latency profile helps reduce tail-response delays, which is especially valuable for latency-sensitive applications like real-time databases, VDI, and SLA-driven cloud services.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB In this series, the 3.84 TB model sits at the sweet spot for mainstream enterprise deployment. Compared with the 1.92 TB version, it gives much better headroom for data growth, overprovisioning flexibility, and workload consolidation without changing the expected performance profile. Compared with the 7.68 TB option, it usually delivers a more attractive cost-per-deployment while avoiding unnecessary capacity spend for mid-sized environments. It is especially well suited for medium virtualization clusters, such as hosting boot and application volumes for about 40 to 60 business workloads.

FAQ