Samsung MZWLL6T4HMLS-000D3 6.4 TB PM1725a PCIe Gen3 x4 2.5 inch Write Intensive Solid State Drive

General

Brand	Samsung
Model	PM1725a
Capacity	6.4 TB
Usage Class	Write Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	5
Total Bytes Written	58400 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	3000 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLW6T4HMIV-00003

Engineer's Note

Compared with the previous-generation MZWLW6T4HMIV-00003, the Samsung PM1725a (MZWLL6T4HMLS-000D3) delivers a clear generational step up in enterprise density and sustained mixed-workload capability, combining 6.4 TB of Samsung V-NAND 3D TLC with PCIe Gen3 x4 performance of up to 3,300/3,000 MB/s and 800,000/160,000 IOPS. Its standout value is pairing that throughput with true write-intensive endurance—5 DWPD and 58,400 TBW—making it a stronger choice than its predecessor for virtualization clusters, high-transaction databases, and analytics nodes that need both high capacity and long service life.

Endurance & Reliability

With an endurance rating of 58,400 TBW and 5 DWPD, the MZWLL6T4HMLS-000D3 is built for very heavy write-intensive enterprise workloads over its service life. In practical terms, this level of endurance is far beyond typical OS, boot, logging, virtualization, and mixed server usage, giving buyers strong confidence that it can operate for many years under normal data center conditions without endurance concerns. For enterprise reliability, the drive includes power loss protection (PLP), which helps preserve in-flight data and protect metadata if power is interrupted unexpectedly. Its UBER of 1.0E-17 and 2 million hour MTBF indicate an enterprise-class design focused on extremely low uncorrectable error rates and long-term operational stability, which is critical for procurement decisions in mission-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 host interface, paired with strong sequential read throughput, accelerates VM boot storms, database restores, and large-scale analytics scans by reducing storage as a bottleneck in enterprise servers.
2. Its high random read capability enables fast response under heavily concurrent OLTP, virtualization, and metadata-intensive workloads where millions of small accesses must be served predictably.
3. A 5 DWPD endurance rating makes it well suited for write-intensive enterprise use cases such as logging, caching, journaling, and mixed database workloads that demand sustained reliability over the drive’s service life.
4. Samsung V-NAND 3D TLC provides a balanced foundation of density, power efficiency, and cost effectiveness, helping data centers scale capacity without giving up enterprise-class consistency.
5. The low typical latency supports quicker transaction commits and more responsive application performance, which is especially valuable for latency-sensitive databases and real-time service infrastructure.

Capacity Sweet

Lower capacity reference: 3.2 TB Higher capacity reference: 12.8 TB The 6.4 TB point is the sweet spot in this SSD family. Compared with the 3.2 TB option, it gives much more headroom for VM growth, mixed application datasets, and overprovisioning flexibility without changing the expected enterprise-class performance profile. Compared with the 12.8 TB model, it delivers a more attractive cost-per-deployment while avoiding the budget premium of higher-density flash. In practice, 6.4 TB is ideal for mid-scale infrastructure, such as a 6- to 8-node virtualization cluster or a compact all-flash database environment serving departmental workloads.

FAQ