Samsung MZWLR1T9HBJR-00007 1.92 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3500 MB/s
Random Read IOPS	1400000
Random Write IOPS	100000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR1T9HBJR-0007C

Engineer's Note

Compared with the previous MZWLR1T9HBJR-0007C revision, the MZWLR1T9HBJR-00007 upgrades the PM1733 with Samsung 5th-Gen 9x-Layer V-NAND on a PCIe Gen4 x4 interface, delivering up to 7,000/3,500 MB/s and 1.4M/100K IOPS for a clear generational gain in throughput and read responsiveness. Its 1 DWPD endurance and 3,504 TBW in a 1.92 TB footprint give it a stronger balance of performance and lifecycle than many peer Gen4 TLC drives, making it especially well suited for virtualization clusters, scale-out database tiers, and low-latency analytics caching.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, this SSD is built to sustain writing its full usable capacity every day without exhausting its wear budget. In typical server boot, OS, application, and read-heavy business workloads, that level of endurance is comfortably more than enough for long-term deployment and provides a strong safety margin for daily operation. Enterprise reliability is further enhanced by power-loss protection (PLP), which helps safeguard in-flight data and prevents table or metadata corruption during an unexpected power interruption. Its UBER of 1.0E-17, together with a 2 million-hour MTBF, reflects an extremely low probability of unrecoverable read errors and the kind of data integrity expected in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with top-tier sequential bandwidth, enables rapid dataset streaming and much faster VM, database, and analytics job startup in performance-sensitive servers.
2. Its outstanding random read capability is ideal for highly concurrent OLTP databases, virtualization clusters, and large-scale metadata workloads where fast access to small blocks drives user responsiveness.
3. A 1 DWPD endurance rating makes it a strong fit for mixed-read enterprise environments that need predictable reliability under steady daily rewrite activity without overpaying for ultra-write-heavy media.
4. Samsung’s 5th-Gen 9x-Layer 3D TLC V-NAND balances density, power efficiency, and sustained enterprise performance, helping data centers scale capacity while maintaining consistent QoS.
5. The low typical latency supports faster transaction completion and tighter application response times, which is especially valuable for latency-sensitive databases, caching tiers, and real-time service infrastructure.

Capacity Sweet

Lower capacity reference: 960 GB Current model: 1.92 TB Higher capacity reference: 3.84 TB At 1.92 TB, this drive sits in the sweet spot of the family. Compared with the 960 GB option, it gives much better headroom for OS images, logs, hot data, and future growth, reducing early capacity pressure. Compared with the 3.84 TB model, it usually delivers the best balance of acquisition cost, usable capacity, and enterprise-grade performance consistency. In practice, 1.92 TB is well suited for mid-scale virtualization, such as a 6 to 10 host cluster running around 120 to 180 general-purpose virtual desktop or application boot volumes.

FAQ