Samsung MZWLR1T9HCJR-00AD3 1.92 TB PM1733A PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733A
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	2400 MB/s
Random Read IOPS	800000
Random Write IOPS	100000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR1T9HCJR-00007

Engineer's Note

Compared with the previous MPN MZWLR1T9HCJR-00007, the PM1733A (MZWLR1T9HCJR-00AD3) advances to a PCIe Gen4 x4 architecture with Samsung 6th-Gen 128-layer V-NAND, delivering up to 7,000 MB/s sequential read and 800,000 random-read IOPS for clearly higher host bandwidth and transaction throughput. Its 1.92 TB capacity, 1 DWPD endurance, and 3,504 TBW make it a strong fit for read-intensive virtualization, scale-out storage, and analytics tiers that need Gen4-class performance without moving to a higher-endurance, higher-cost mixed-use drive.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, the MZWLR1T9HCJR-00AD3 is designed to handle writing its full capacity once per day across its rated service life, which is a strong fit for mainstream enterprise and mixed-use server workloads. In practical terms, for typical OS, boot, virtualization, and general application storage scenarios, this level of endurance supports many years of stable operation and can comfortably serve as a long-life system drive under normal data-center write patterns. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. Its UBER of 1.0E-17, together with a 2 million hour MTBF, reflects a high-integrity design intended to minimize unrecoverable read errors and support dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with top-tier sequential read bandwidth, accelerates dataset streaming, VM boot storms, and large model loading in performance-sensitive servers.
2. This level of random read performance sustains massive parallel access, making it ideal for high-concurrency OLTP databases, metadata-heavy virtualization, and real-time analytics.
3. A 1 DWPD endurance profile provides a balanced fit for read-centric enterprise workloads, supporting predictable long-term operation without overpaying for unnecessary write headroom.
4. Samsung 6th-Gen 128-layer 3D TLC V-NAND combines enterprise-class density, power efficiency, and reliability, helping data centers scale capacity while maintaining consistent QoS.
5. The low typical latency improves application responsiveness and tail-latency control, which is critical for latency-sensitive databases, caching tiers, and interactive cloud services.

Capacity Sweet

Lower capacity reference: 960 GB Higher capacity reference: 3.84 TB Capacity Positioning Analysis: In this series, the 1.92 TB model sits at the practical sweet spot. Compared with the 960 GB version, it gives meaningfully better headroom for OS images, application data, logs, and future growth, reducing the risk of early capacity pressure. Compared with the 3.84 TB option, it preserves most of the same enterprise-class throughput and IOPS while delivering a more attractive cost-per-deployment and easier budget scaling. It is well suited for mid-scale virtualization clusters, such as hosting boot and application storage for around 40 to 60 general-purpose virtual machines.

FAQ