Samsung MZWLR30THBLA-00AHI 30.72 TB PM1733a PCIe Gen4 x4 U.3 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733a
Capacity	30.72 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.3 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	56064 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	160000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR30THBLA-00007

Engineer's Note

Compared with the predecessor MZWLR30THBLA-00007, the PM1733a (MZWLR30THBLA-00AHI) delivers a clear generational step forward by pairing Samsung 6th-Gen 128-layer 3D TLC V-NAND with PCIe Gen4 x4, reaching up to 7,000/3,800 MB/s sequential throughput and 1,450,000/160,000 IOPS at 30.72 TB. Its standout value is combining very high density with enterprise endurance—1 DWPD and 56,064 TBW—making it a stronger fit than prior-generation drives for read-intensive hyperscale storage, large virtualization clusters, and analytics platforms that need maximum capacity without sacrificing front-end performance.

Endurance & Reliability

With an endurance rating of 56,064 TBW and 1 DWPD, this SSD is designed to handle the equivalent of a full drive write every day across a standard enterprise endurance cycle, making it well suited for sustained data-center workloads. In typical lighter-duty use such as a boot drive, system disk, or read-heavy application storage, this level of write endurance provides substantial long-term margin and helps ensure worry-free operation for many years. Its built-in power loss protection (PLP) helps preserve in-flight data and critical metadata during an unexpected power interruption, reducing the risk of corruption and unclean shutdown effects. Combined with an enterprise-class UBER of 1.0E-17 and a 2.5 million hour MTBF rating, it is engineered to deliver very high data integrity and dependable service in mission-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface provides the bandwidth headroom needed to keep virtualized databases, analytics clusters, and GPU-fed application pipelines from being constrained by storage transport.
2. Its class-leading sequential read performance accelerates large-block workloads such as AI model loading, backup recovery, media processing, and high-speed dataset ingestion.
3. Exceptional random read capability enables consistently fast response under heavily concurrent OLTP, VDI, and metadata-intensive cloud workloads where small-block access dominates.
4. Built for one full drive rewrite per day on Samsung’s mature 128-layer 3D TLC V-NAND, it offers a balanced endurance profile for mixed enterprise workloads that need dependable longevity without moving to higher-cost write-optimized media.
5. With ultra-low typical latency, the drive helps reduce tail-response times and improves application QoS in transaction systems, real-time analytics, and latency-sensitive scale-out infrastructure.

Capacity Sweet

Lower capacity reference: 15.36 TB Higher capacity reference: 61.44 TB Capacity positioning analysis: In this series, 30.72 TB sits at the practical sweet spot. Versus the 15.36 TB model, it gives significantly more headroom for data growth, denser server consolidation, and longer refresh cycles without changing the performance profile in any meaningful way. Compared with the 61.44 TB option, it offers a more balanced acquisition cost, better budget efficiency per deployment node, and easier capacity right-sizing while still delivering enterprise-class throughput and IOPS. It is especially well suited for medium-scale virtualization clusters, high-density read-centric databases, or consolidated analytics storage for around 40 to 60 application workloads.

FAQ