Samsung MZWLR30THBLA 30.72 TB PM1733A PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733A
Capacity	30.72 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	56064 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	165000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR30THALA

Engineer's Note

Compared with the previous-generation MZWLR30THALA, the PM1733A MZWLR30THBLA advances to Samsung 6th-Gen 128-layer V-NAND and a PCIe Gen4 x4 interface, delivering up to 7,000/3,800 MB/s and 1,450,000/165,000 IOPS for a clear step up in host bandwidth and transaction responsiveness. At 30.72 TB with 1 DWPD and 56,064 TBW, it is a strong fit for high-density read-centric cloud storage, scale-out analytics, and virtualization clusters that need maximum capacity per slot without sacrificing enterprise endurance.

Endurance & Reliability

With an endurance rating of 56,064 TBW and 1 DWPD, the MZWLR30THBLA is designed to sustain a full drive write per day throughout its rated service life, which is more than sufficient for typical enterprise operating system, virtualization, and mixed-read workloads. In practical terms, under normal system-disk or mainstream server usage, this level of endurance provides long-term write headroom and supports stable operation over many years without endurance-related concern. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and metadata during an unexpected power interruption, reducing the risk of corruption and improving system recovery confidence. Its UBER of 1.0E-17, together with a 2 million hour MTBF, indicates very strong data integrity and dependable long-term operation, making it a trustworthy choice for business-critical storage deployments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with up to 7000 MB/s sequential read performance, accelerates large dataset streaming, VM boot storms, and analytics job startup in bandwidth-hungry enterprise platforms.
2. With 1,450,000 K IOPS random read capability, this drive sustains extremely dense transactional and metadata-heavy workloads, helping databases and virtualized clusters respond faster under peak concurrency.
3. A 1 DWPD endurance rating makes it well suited for read-centric enterprise deployments that still require predictable daily write capacity, such as cloud infrastructure, content delivery, and scale-out storage tiers.
4. Samsung V-NAND 6th-Gen 128-layer 3D TLC provides a strong balance of capacity, power efficiency, and reliability, enabling cost-effective enterprise scaling without sacrificing consistent flash performance.
5. A typical latency of 85 µs helps reduce storage wait time at the application layer, improving QoS for latency-sensitive services like real-time analytics, indexing, and high-frequency transactional processing.

Capacity Sweet

Lower capacity reference: 15.36 TB Higher capacity reference: 61.44 TB Capacity positioning analysis: In this series, 30.72 TB sits at the sweet spot. Compared with the 15.36 TB version, it gives much more headroom for data growth, higher VM density, and longer refresh cycles without changing the drive count. Compared with the 61.44 TB model, it usually delivers a better balance of acquisition cost, usable capacity, and enterprise-class performance, since sequential throughput and random IOPS are broadly similar across capacities. It is well suited for medium-to-large virtualization clusters, such as hosting boot and application volumes for about 150 to 250 business workloads.

FAQ