Samsung MZWLR3T2HCLS-00AD3 3.2 TB PM1735a PCIe Gen4 x4 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735a
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	250000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL3T2HAJR-00005

Engineer's Note

Compared with MZWLL3T2HAJR-00005, the Samsung PM1735a (MZWLR3T2HCLS-00AD3) advances to a PCIe Gen4 x4 platform and delivers up to 7,000/3,800 MB/s sequential performance with 1.45M/250K random IOPS, providing a clear generational uplift in bandwidth and transaction density for latency-sensitive enterprise workloads. Its 3 DWPD endurance, 17,520 TBW rating, and Samsung V-NAND 3D TLC make this 3.2 TB model a strong fit for write-intensive database, virtualization, and mixed OLTP environments that need sustained performance without sacrificing drive longevity.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 3 DWPD, the MZWLR3T2HCLS-00AD3 is built for sustained enterprise write workloads and can safely handle multiple full-drive writes every day across its service life. In typical server use, this level of endurance is far beyond the needs of an OS or boot drive and also provides strong headroom for virtualization, database, and cache-intensive applications over many years of operation. Its enterprise reliability is further strengthened by power loss protection (PLP), which helps preserve in-flight data and prevents corruption if power is interrupted unexpectedly. The UBER rating of 1.0E-17 indicates an extremely low unrecoverable bit error rate, giving procurement teams added confidence in data integrity for business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface unlocks full host-side bandwidth, enabling this drive to keep modern database, virtualization, and analytics platforms fed without becoming a storage bottleneck.
2. Its sequential read performance accelerates large-block workloads such as AI model loading, backup recovery, and high-speed data ingestion, cutting wait time for throughput-heavy enterprise applications.
3. The outstanding random read capability allows dense VM farms, OLTP databases, and metadata-intensive services to sustain massive parallel access with consistently fast response under pressure.
4. A 3 DWPD endurance rating makes it well suited for write-intensive enterprise environments like caching tiers, logging platforms, and mixed transactional workloads that demand predictable lifespan.
5. Samsung V-NAND 3D TLC, paired with low typical latency, provides a strong balance of capacity efficiency, power-aware performance, and near-instant access for latency-sensitive server workloads.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB In this series, 3.2 TB is the practical sweet spot. Compared with the 1.6 TB model, it gives much better capacity headroom for mixed enterprise workloads, reducing early drive saturation and leaving more room for VM growth, logs, and application data. Compared with the 6.4 TB version, it usually delivers the best balance of acquisition cost, usable capacity, and enterprise-class performance consistency. This makes 3.2 TB especially well suited for mid-scale virtualization clusters, such as a 3 to 5 host environment running 60 to 120 general-purpose virtual machines.

FAQ