Samsung MZWLR3T8HBLS-0007C 3.84 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILS3T8HMLH-000D3

Engineer's Note

Compared with the previous-generation MZILS3T8HMLH-000D3, the Samsung PM1733 MZWLR3T8HBLS-0007C advances to a PCIe Gen4 x4 architecture and delivers up to 7,000 MB/s sequential read, 3,800 MB/s write, and 1.45M random read IOPS, providing a clear step up in host-interface efficiency and read-intensive transaction performance. Its 3.84 TB capacity, 5th-Gen Samsung V-NAND TLC, and 7008 TBW endurance make it a strong choice for virtualization clusters, scale-out databases, and analytics nodes that need higher throughput density than the prior generation without moving to a higher-DWPD drive class.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, this SSD is designed to handle writing its full capacity once per day across its warranty usage profile, which is more than sufficient for typical enterprise boot, system, and mixed read/write workloads. In practical terms, under normal server OS, application, or appliance duty as a system drive, this level of endurance provides long-term write headroom and can support many years of stable operation without endurance-related concern. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and protect metadata integrity during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. Its ultra-low UBER of 1.0E-17, together with a 2 million hour MTBF, reflects a high-integrity design that minimizes unrecoverable read errors and supports dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface gives this drive the host-side bandwidth needed to keep modern virtualization, analytics, and GPU-accelerated servers from being bottlenecked by storage connectivity.
2. Its top-tier sequential read performance sharply reduces the time required to load large databases, VM images, and AI models into memory during peak business operations.
3. The combination of extremely high random read capability and microsecond-class response time enables faster transaction handling, snappier metadata access, and more consistent QoS in latency-sensitive enterprise workloads.
4. A one-drive-write-per-day endurance rating makes it a strong fit for read-intensive to mixed-use data center deployments that need predictable lifespan under continuous production traffic.
5. Samsung’s fifth-generation high-layer 3D TLC V-NAND balances density, efficiency, and enterprise reliability, helping operators lower rack-level power and cost without sacrificing mainstream performance.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB In this series, 3.84 TB sits at the sweet spot for mainstream enterprise deployment. Compared with 1.92 TB, it offers much better headroom for dataset growth, RAID efficiency, and longer refresh cycles without changing the expected read/write and random IOPS profile. Compared with 7.68 TB, it delivers a more attractive cost-per-drive and easier budget scaling while keeping performance essentially in the same enterprise range. It is especially well suited for mid-sized virtualization clusters, such as hosting OS and application volumes for around 60 to 80 mixed-workload virtual machines.

FAQ