Samsung MZWLR3T8HBLS-00AD3 3.84 TB PM1733 PCIe Gen4 x4 2.5 inch Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL3T8HMLS-00007

Engineer's Note

Compared with MZWLL3T8HMLS-00007, the PM1733 delivers a clear generational leap on PCIe Gen4 x4, pairing up to 7,000/3,800 MB/s sequential bandwidth with 1.45M/115K random IOPS for lower-latency, higher-density enterprise consolidation. With 3.84TB capacity, 1 DWPD and 7,008TB TBW on Samsung V-NAND 3D TLC, it is a strong fit for mixed read/write workloads such as virtualization, OLTP and real-time analytics where sustained performance and endurance both matter.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, the MZWLR3T8HBLS-00AD3 is built to handle a full drive write per day across its warranty-defined usage profile, which is more than sufficient for typical enterprise system, boot, and mixed read/write workloads. In practical terms, this level of endurance provides long-term confidence for continuous business use and easily supports many years of stable operation in normal server deployment scenarios. Its enterprise-class reliability is further strengthened by power loss protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. An UBER of 1.0E-17, together with a 2 million-hour MTBF, indicates a very low likelihood of unrecoverable bit errors and supports the high data integrity and operational dependability expected in professional storage environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 host interface, paired with top-tier sequential throughput, accelerates large dataset movement, VM boot storms, and analytics job startup in bandwidth-hungry enterprise servers.
2. Its ultra-high random read capability enables databases, metadata services, and large-scale virtualization platforms to sustain heavy concurrent access with faster response under peak demand.
3. A full drive write per day endurance profile makes it a strong fit for mixed enterprise workloads that require predictable lifespan without overprovisioning for unnecessary write headroom.
4. Samsung V-NAND 3D TLC balances density, power efficiency, and cost, giving data centers a practical sweet spot for scaling performance storage across mainstream business applications.
5. The low typical latency helps reduce tail-response delays, improving transaction consistency and application QoS in latency-sensitive environments such as OLTP, caching, and real-time services.

Capacity Sweet

Lower-capacity reference: 1.92 TB Higher-capacity reference: 7.68 TB Capacity positioning analysis: In this series, 3.84 TB is the sweet-spot capacity. Compared with the 1.92 TB model, it gives much more headroom for data growth, VM sprawl, log retention, and overprovisioning flexibility without changing the expected enterprise-class sequential and random I/O profile. Compared with the 7.68 TB option, it typically delivers a better balance of acquisition cost, usable capacity, and deployment efficiency while keeping performance essentially in the same class. It is especially well suited for mid-scale virtualization clusters, database nodes, and read-heavy application servers in the 20- to 50-workload range.

FAQ