Samsung MZWLR3T8HCLS-00A07 3.84 TB PM1733A PCIe Gen4 x4 2.5" Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733A
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR3T8HBLS-00A07

Engineer's Note

Compared with MZWLR3T8HBLS-00A07, the MZWLR3T8HCLS-00A07 PM1733A advances to Samsung 6th-Gen 128-layer V-NAND and a refined PCIe Gen4 x4 design, delivering up to 7,000/3,800 MB/s and 1,450,000 random-read IOPS for noticeably stronger low-latency response in virtualization and scale-out database environments. At 3.84 TB with 1 DWPD and 7,008 TBW, it offers a well-balanced endurance-to-performance profile that gives this MPN a clear edge over same-class TLC enterprise drives for read-intensive mixed workloads where sustained throughput and high queue-depth efficiency matter most.

Endurance & Reliability

With an endurance rating of 7,008 TBW and 1 DWPD, the MZWLR3T8HCLS-00A07 is designed to handle writing its full usable capacity once per day throughout its rated service life, which is more than sufficient for typical enterprise system, boot, and mixed application workloads. In practical terms, under normal server OS, virtualization, and read-heavy business usage, this drive can be deployed with high confidence for long-term operation without endurance becoming a near-term concern. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and protects mapping table integrity during unexpected power interruptions, reducing the risk of data corruption and unclean shutdown events. Its UBER of 1.0E-17, together with a 2 million hour MTBF, reflects a very high level of data integrity and operational reliability expected in data center environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface provides the host bandwidth needed to keep modern virtualization, database, and AI platforms from being bottlenecked by storage connectivity.
2. Its class-leading sequential read performance accelerates large-block workloads such as analytics scans, backup restore, media processing, and model loading.
3. The exceptionally high random read capability, paired with ultra-low typical latency, enables faster transaction response and higher VM density in read-intensive enterprise environments.
4. A durability rating of one full drive write per day makes it a strong fit for mainstream enterprise workloads that need predictable endurance without overprovisioning for heavier write cycles.
5. Samsung’s sixth-generation, one-hundred-twenty-eight-layer V-NAND TLC delivers a balanced mix of capacity efficiency, power-conscious operation, and enterprise-grade reliability for always-on data center use.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB In this product family, the 3.84 TB model sits in the sweet spot for mainstream enterprise deployment. Compared with the 1.92 TB option, it provides much better headroom for data growth, higher VM density, and longer refresh cycles without changing the storage tier. Compared with the 7.68 TB version, it usually delivers the best balance of acquisition cost, usable capacity, and performance consistency, since sequential throughput and random IOPS are broadly similar across capacities. It is especially well suited for mid-scale virtualization clusters, database nodes, and roughly 40 to 60 mixed-workload application servers.

FAQ