Samsung MZXL5960HBHQ-00AH3 9.60 TB PM1733 PCIe Gen4 x4 2.5 inch Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	9.60 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	1
Total Bytes Written	17520 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	155000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL7T6HMLA-00007

Engineer's Note

Compared with MZWLL7T6HMLA-00007, the Samsung PM1733 MZXL5960HBHQ-00AH3 advances to a PCIe Gen4 x4 platform and delivers up to 7,000/3,800 MB/s with 1,450,000/155,000 IOPS, providing a clear generational gain in bandwidth and transaction density for latency-sensitive enterprise storage tiers. Its 9.60 TB capacity, 1 DWPD endurance, and 17,520 TBW on Samsung V-NAND 3D TLC make it a strong fit for virtualization clusters, scale-out databases, and high-throughput analytics nodes that need better performance per drive without sacrificing predictable endurance.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 1 DWPD, the MZXL5960HBHQ-00AH3 is designed to handle sustained daily write activity across enterprise use cases without premature wear concerns. In typical workloads, this level of endurance is more than sufficient for long-term deployment, and if used as a system or boot drive, it can generally be expected to operate for many years with ample endurance headroom. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protect metadata integrity if power is suddenly interrupted. Its UBER of 1.0E-17 indicates an extremely low uncorrectable bit error rate, supporting high data integrity expectations in business-critical storage environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface gives this drive the host bandwidth needed to keep virtualization clusters, high-speed caching tiers, and data-intensive application servers from being bottlenecked by storage connectivity.
2. Its top-tier sequential read performance accelerates large-block workloads such as database backup restores, media processing, and rapid dataset loading for analytics and AI pipelines.
3. The exceptionally strong random read capability enables this SSD to sustain dense mixed-VM environments, high-transaction OLTP systems, and metadata-heavy applications with consistently fast response under concurrency.
4. Built on Samsung V-NAND 3D TLC and rated for enterprise write endurance, it provides a practical balance of capacity efficiency, predictable lifespan, and dependable operation for mainstream read-centric datacenter deployments.
5. The very low typical latency helps reduce tail-response times in latency-sensitive services, improving user experience in real-time databases, virtual desktops, and scale-out cloud platforms.

Capacity Sweet

Lower reference capacity: 7.68 TB Higher reference capacity: 15.36 TB In this SSD family, the 9.60 TB model is a practical sweet spot. Compared with 7.68 TB, it gives noticeably more headroom for dataset growth, overprovisioning flexibility, and longer refresh cycles without changing the drive class or expected enterprise performance profile. Compared with 15.36 TB, it typically delivers a more attractive cost-per-deployment while avoiding the budget premium of very high-capacity tiers, yet still keeping similar sequential and random I/O behavior. It is well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for roughly 60 to 80 virtual machines.

FAQ