Samsung MZXLR3T2HBLS-000H3 3.2 TB PM1735 PCIe Gen4 x8, NVMe 1.3 2.5 inch Enterprise / Data Center Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	3.2 TB
Usage Class	Enterprise / Data Center Mixed Use

Interface

Host Interface	PCIe Gen4 x8, NVMe 1.3
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit MLC
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	250000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZQLW3T2HMJP

Engineer's Note

Compared with the previous-generation MZQLW3T2HMJP, the Samsung PM1735 MZXLR3T2HBLS-000H3 delivers a clear generational uplift by moving to PCIe Gen4 x8 NVMe and reaching up to 7,000/3,800 MB/s with 1,450,000/250,000 IOPS for substantially higher host bandwidth and transaction density. Its 3 DWPD endurance, 17,520 TBW rating, and Samsung V-NAND 3-bit MLC make this 3.2 TB model a strong fit for write-intensive virtualization, OLTP databases, and mixed enterprise workloads that need both sustained durability and top-tier read performance.

Endurance & Reliability

With an endurance rating of 17,520 TBW, this SSD is designed to handle 17.5 petabytes of total writes over its service life, which is a very strong margin for enterprise deployment. In practical terms, that equates to roughly 4.8 TB of writes every day for 10 years, making it an excellent fit not only as a worry-free system drive but also for virtualization, database, caching, and other write-intensive business workloads. Its built-in Power Loss Protection (PLP) helps preserve in-flight data and prevents metadata corruption during an unexpected power outage, which is critical for maintaining system stability and data consistency in servers and storage arrays. The UBER rating of 1.0E-17 means an extremely low probability of unrecoverable read errors, giving procurement teams added confidence in long-term data integrity for enterprise applications.

Technical Specs & Insights

1. The PCIe Gen4 x8 interface with NVMe support provides a wide, low-overhead data path that keeps modern dual-socket servers and storage nodes fully fed under heavy parallel workloads.
2. Its class-leading sequential read bandwidth accelerates dataset streaming, backup restore, and large model loading, reducing wait time for data-intensive applications.
3. Exceptional random read performance, paired with microsecond-class latency, enables faster transaction handling and more predictable QoS for virtualization, OLTP, and real-time analytics.
4. The enterprise endurance profile is built for write-heavy deployment, allowing sustained daily rewrites over the full warranty period without compromising service life.
5. Samsung V-NAND 3-bit MLC balances density, power efficiency, and enterprise-grade reliability, making it well suited for scaling capacity in performance-sensitive data center environments.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB At 3.2 TB, this model sits in the sweet spot of the series. Compared with the 1.6 TB version, it gives much better headroom for data growth, overprovisioning, and mixed enterprise workloads without forcing early drive expansion. Compared with the 6.4 TB option, it delivers a more balanced acquisition cost while keeping essentially the same enterprise-class sequential throughput and random IOPS profile. That makes 3.2 TB a strong fit for mid-scale virtualization clusters, such as hosting boot and application volumes for about 60 to 80 business VMs per node.

FAQ