General

Brand	Samsung
Model	PM893
Capacity	240 GB
Usage Class	Enterprise / Data Center Read Intensive

Interface

Host Interface	SATA 6.0 Gbps
Total Interface Bandwidth	6 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V6 (128-layer) TLC
Drive Writes Per Day	1.3
Total Bytes Written	341 TBW

Performance

Sequential Read	550 MB/s
Sequential Write	380 MB/s
Random Read IOPS	98000
Random Write IOPS	12000
Average Latency	120 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ7LH240HAHQ

Engineer's Note

Compared with the previous-generation MZ7LH240HAHQ, the PM893 MZ7L3240HCHQ-00A07 moves to Samsung V6 128-layer TLC NAND, delivering a more modern SATA enterprise platform with 1.3 DWPD endurance, 341 TBW, and up to 98,000/12,000 random read/write IOPS in the 240 GB class. Its combination of saturated 550 MB/s read performance, strong mixed-workload responsiveness, and enterprise-grade write durability makes it a particularly strong fit for boot drives, edge servers, and read-intensive transactional infrastructure that still depends on SATA 6.0 Gbps.

Endurance & Reliability

With an endurance rating of 341 TBW, this SSD can sustain about 93 GB of host writes per day for 10 years, which is well above the write volume of a typical OS, boot, or application drive. In practical terms, for common system-disk and read-intensive business workloads, it provides long service life with ample endurance headroom. Its enterprise-class reliability features further reduce operational risk: Power Loss Protection (PLP) helps preserve in-flight data and prevents metadata corruption if power is suddenly interrupted. An UBER of 1.0E-17 means an extremely low probability of unrecoverable bit errors during reads, supporting high data integrity and dependable long-term operation.

Technical Specs & Insights

1. The SATA interface, paired with near-bus-limit sequential throughput, makes this drive an easy drop-in upgrade for existing enterprise servers and storage arrays, accelerating boot storms, backups, and large-file scans without requiring a platform refresh.
2. Strong random-read performance helps virtualization clusters, OLTP databases, and read-heavy analytics stay responsive under intense small-block access, improving user concurrency and VM density.
3. Its enterprise write-endurance profile supports sustained daily overwrites across years of operation, making it a solid fit for mixed-use server workloads such as email, logging, and general-purpose cloud storage.
4. Samsung’s high-layer TLC NAND delivers a practical balance of capacity, efficiency, and consistency, giving data centers lower cost per terabyte without giving up enterprise-class reliability behavior.
5. Low typical latency reduces storage wait time for each I/O, which directly benefits metadata lookups, indexing, and other latency-sensitive transactional applications.

Capacity Sweet

Lower capacity reference: None in the standard MZ7L3240HCHQ-00A07 family; 240 GB is effectively the entry capacity. Higher capacity reference: 480 GB At 240 GB, this model sits at the practical sweet spot of the series. As the entry enterprise capacity, it already gives noticeably more breathing room than very small boot-drive sizing, leaving safer headroom for OS images, logs, swap, patches, and light application data. Compared with the 480 GB version, it keeps acquisition cost and rack-level storage spend lower while delivering essentially the same enterprise-class sequential and random I/O behavior. It is best suited for small to mid-size deployments, such as a 12 to 20-node virtualization cluster using local system disks.

FAQ