General

Brand	Samsung
Model	PM893
Capacity	7.68 TB
Usage Class	Read Intensive

Interface

Host Interface	SATA 6.0 Gbps
Total Interface Bandwidth	6 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	14016 TBW

Performance

Sequential Read	550 MB/s
Sequential Write	520 MB/s
Random Read IOPS	98000
Random Write IOPS	30000
Average Latency	120 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ7LH7T6HMLA

Engineer's Note

Compared with MZ7LH7T6HMLA, the PM893 upgrades to Samsung 6th-Gen 128-layer V-NAND and delivers up to 98,000/30,000 IOPS with 14,016 TBW in the same 7.68 TB SATA footprint, giving enterprise platforms a clear generational step up in random-read responsiveness and sustained endurance. For SATA-bound servers where PCIe is not practical, MZ7L37T6HBLA-00W07 is a high-density drop-in upgrade that effectively saturates the 6.0 Gbps interface at 550/520 MB/s while preserving 1 DWPD durability for virtualization clusters, boot/storage tiers, and read-intensive database nodes.

Endurance & Reliability

With an endurance rating of 14,016 TBW and 1 DWPD, the MZ7L37T6HBLA-00W07 is designed to handle writing its full capacity once per day across its warranted service life, which is more than sufficient for typical enterprise boot, read-intensive, and mixed-use workloads. In practical terms, for OS, virtualization, logging, or general server storage duties, this level of endurance provides long-term write headroom and can support many years of stable operation without endurance becoming a concern under normal deployment conditions. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruption, reducing the risk of corruption and improving system integrity. Its UBER of 1.0E-17, together with a 2 million-hour MTBF, indicates very strong data reliability and a very low probability of unrecoverable bit errors, making it a dependable choice for business-critical environments.

Technical Specs & Insights

1. The SATA 6.0 Gbps interface, paired with 550 MB/s sequential read performance, enables straightforward drop-in upgrades for legacy enterprise platforms while accelerating boot, backup, and large-file access workflows.
2. With 98,000 K IOPS random read capability, the drive sustains responsive performance under highly fragmented workloads such as virtualized databases, metadata-heavy applications, and multi-user transactional environments.
3. A 1 DWPD endurance rating gives enterprises the confidence to run steady daily write activity across the warranty period without overprovisioning for heavier mixed-use server workloads.
4. Samsung V-NAND 6th-Gen 128-layer 3D TLC combines mature cost efficiency with enterprise-grade density and power characteristics, making it well suited for scaling capacity in data center storage tiers.
5. The 120 µs typical latency helps reduce storage response time at the microsecond level, supporting more predictable QoS and smoother application behavior in latency-sensitive server deployments.

Capacity Sweet

In the same series, the next lower capacity is 3.84 TB and the next higher capacity is 15.36 TB. With sequential read/write and random IOPS broadly aligned across the range, the 7.68 TB model sits at the sweet spot. Compared with 3.84 TB, it gives much better headroom for dataset growth, VM expansion, and longer refresh cycles. Compared with 15.36 TB, it delivers a more balanced acquisition cost while preserving essentially the same enterprise performance profile. It is especially well suited for mid-scale virtualization clusters, mixed database nodes, or dense boot-plus-data tiers in 1U and 2U servers.

FAQ