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Micron MT36HTF25672FY-667D1 2GB DDR2 FB-DIMM 667MHz | Reliable ECC

MPN:MT36HTF25672FY-667D1 By:Micron Warranty:1 year
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General

ModelMT36HTF25672FY-667D1
Product TypeMemory Module
Compliance StandardsRoHS
Memory Capacity2 GB
Memory TechnologyDDR2
Product Voltage1.8V
RAM Speed667MHz
RAM StandardDDR2-667/PC2-5300
Error IdentifyingECC
Signal TypeFully Buffered
Column Access Strobe (CAS)CL5
RankDual Rank x4
Quantity of Pins240-pin
RAM GenreFB-DIMM

Engineer's Note

This FB-DIMM module with ECC and a fully buffered signal architecture is engineered for legacy server platforms, delivering robust data integrity ideal for memory-intensive virtualization and in-memory database workloads. Its dual-rank x4 organization and CL5 latency enhance signal stability and bandwidth efficiency in multi-DIMM configurations, ensuring reliable operation under sustained enterprise loads.

Technical Specs & Insights

1. ECC protection detects and corrects single-bit memory errors in real time, safeguarding transactional data integrity for mission-critical database servers.
2. Fully Buffered signal architecture serializes command and data paths, enabling large memory populations with reduced electrical load for high-density virtualization hosts.
3. FB-DIMM form factor leverages the Advanced Memory Buffer to isolate the DRAM from the memory channel, improving signal integrity in multi-socket server racks.
4. Dual Rank x4 organization interleaves accesses across multiple banks of four-bit-wide DRAM, boosting sustained throughput under parallel workloads like in-memory caching.
5. 2 GB capacity per module provides a foundational building block that, when populated across numerous DIMM slots, scales total server memory to accommodate large VM fleets and container orchestration.

Why These Specs Matter

The MT36HTF25672FY-667D1 is a server-grade DDR2 fully buffered DIMM, and its four defining characteristics directly address the acute demands of enterprise data centers. In a virtualized cluster running multiple guest machines, ECC error correction becomes non-negotiable—a single bit flip in a hypervisor’s memory can corrupt an entire virtual environment, but the ECC technology on this module detects and corrects single-bit errors in real time, preventing silent data corruption and unplanned downtime. The fully buffered architecture isolates electrical loading from the memory bus to the advanced buffer chip, enabling dense population of all channels without signal degradation; this matters critically when consolidating dozens of VMs on a single host that must access terabytes of RAM reliably. Coupled with dual-rank x4 organization, the module delivers enhanced interleaving and bandwidth utilization, which accelerates in-memory databases like SAP HANA by reducing access latency under heavy concurrent read/write loads. The 1.8 V operating voltage and strict RoHS compliance further ensure lower power dissipation per module across a fully populated rack, translating into lower cooling costs and a more sustainable infrastructure for 24/7 operation. These design choices are not just specifications—they are your guarantee of runtime integrity, predictable performance, and cost-efficient scaling in mission-critical applications.

Endurance & Reliability

This DDR2-667 ECC Fully Buffered DIMM is a server-grade module. The following capacity planning guidelines address typical server workloads.

General Virtualization
Populate each memory channel with two identical FB-DIMMs to enable dual-rank interleaving and maximise throughput. For consolidating multiple virtual machines, install eight 2 GB modules (16 GB total) spread evenly across the server’s memory branches; this delivers sufficient capacity for guest operating systems while maintaining ECC protection and hot-spare compatibility.

In-Memory Database
Fill every available DIMM slot with these 2 GB ECC modules, prioritising full population to reach 32–64 GB on a typical dual-socket platform. The dual-rank x4 organisation and Fully Buffered architecture reduce access latency and preserve data integrity under heavy caching, ensuring reliable performance for transactional and real-time analytic workloads.

High-Performance Computing (HPC)
Arrange modules in identical groups of four per memory buffer channel to exploit the available fully buffered bandwidth. A homogeneous configuration of eight or more DIMMs (16 GB and above) enables symmetrical multi-channel interleaving, which is critical for feeding multicore CPUs in simulation, computational fluid dynamics and parallel processing jobs.

Verified Compatibility

Rigorously tested server FB-DIMM; compatible with Dell PowerEdge 2950, HP DL380 G5, IBM x3650, and more.

FAQ

Q: Can I mix this MT36HTF25672FY-667D1 with other memory modules of different brands or speeds?

A: Mixing FB-DIMMs is not recommended. All modules should be identical in speed, rank, and capacity to ensure signal integrity and avoid system instability. Mismatched specs may force the memory controller to downclock or cause errors.

Q: Is this memory compatible with my Intel or AMD server platform?

A: This DDR2-667 FB-DIMM is designed for Intel-based servers using chipsets like the 5000P/5000X/5100. It is not compatible with standard DDR2 desktop boards or AMD platforms that lack a fully buffered memory interface.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical FB-DIMMs in matched sets per memory branch, usually starting with the farthest slot from the chipset per channel. Always consult your server board manual, as incorrect ordering can prevent boot or degrade performance.

Q: Does this module support overclocking or XMP profiles?

A: No. This is an enterprise-grade ECC FB-DIMM built for 24/7 stability at JEDEC standard DDR2-667 speeds. It does not support overclocking, XMP, or any non-standard timings; reliability is prioritized over performance tuning.

Q: What warranty and typical failure rate can I expect?

A: This module is covered by a 1-year warranty. FB-DIMMs are engineered for high-reliability server environments, delivering an extremely low annualized failure rate when operated within specified voltage and thermal conditions.

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