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Hynix HMAA8GR7MJR4N-WMTGAA 64GB DDR4 RDIMM 2933MT| Reg ECC Memory

MPN:HMAA8GR7MJR4N-WMTGAA By:SKhynix Warranty:1 year
US$923 - $1,000
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General

Product TypeMemory Module
Memory Capacity64 GB
Memory TechnologyDDR4
Product Voltage1.2V
RAM Speed2933MHz
RAM StandardDDR4-2933/PC4-23400
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL21
RankQuad Rank x4
Quantity of Pins288-pin
RAM GenreRDIMM

Engineer's Note

This 64GB DDR4-2933 registered ECC RDIMM is engineered for enterprise servers and workstations running virtualization, in-memory databases, or mission-critical workloads where data integrity is non-negotiable. Its quad-rank x4 configuration maximizes capacity density for dual-socket platforms, while registered signal buffering and ECC correction stabilize large memory arrays operating at 2933MT/s with a tight CL21 latency.

Technical Specs & Insights

1. ECC protection silently corrects single-bit memory errors, eliminating silent data corruption that would otherwise jeopardize transactional databases and long-running analytics.
2. Registered buffering stabilizes electrical loads across high-density DIMM populations, enabling quad-rank modules to scale reliably without command signal degradation.
3. The substantial capacity per module allows dense virtual machine consolidation and large in-memory caches, slashing storage I/O overhead for latency-sensitive applications.
4. The elevated transfer rate supplies the sustained bandwidth necessary to keep multi-core server processors saturated during parallel big-data ingestion and real-time query processing.
5. Quad-rank x4 organization leverages bank-group rotation to amplify effective concurrency, delivering consistent low-latency access even under heavily consolidated workloads.

Why These Specs Matter

This RDIMM module is clearly engineered for the data center. In virtualized clusters running dozens of VMs on a single host, a single uncorrected bit-flip can cascade into silent data corruption or an entire node crash. The ECC circuitry here hunts down those transient errors in real time, while the registered design buffers command and address signals, allowing the memory controller to drive 64GB or even multiple such DIMMs without electrical degradation. That means you safely pack more tenants onto each server, shrinking your software licensing and power footprint simultaneously. In an in‑memory database like SAP HANA or a Redis cache serving high‑frequency trading, every nanosecond of stalled access burns real revenue. The quad‑rank x4 organization interleaves four independent sets of DRAM chips, exposing far greater bank‑level parallelism; combined with a 2933MT/s transfer rate, it sustains massive bandwidth even under randomized, latency‑sensitive workloads. The 1.2V operating voltage then compounds the savings across a fleet, trimming cooling overhead without sacrificing that mission‑critical stability. Simply put, this memory transforms shared infrastructure from a statistical gamble into a deterministic, high‑density engine for consolidation and real‑time insight.

Endurance & Reliability

Capacity Planning Guidance for a 64GB DDR4-2933 ECC Registered RDIMM

The specified module is a server-class 64GB DDR4-2933 Registered ECC DIMM (RDIMM). Its quad-rank x4 design suits data-center platforms requiring high reliability and massive memory footprints. Below are recommendations for typical server workloads.

General Virtualization
Virtual hosts demand dense, resilient memory to run numerous VMs. Populate all memory channels identically with these 64GB RDIMMs—commonly 4 or 8 modules per CPU—to achieve balanced interleaving and predictable NUMA performance. This symmetric layout maximizes throughput while ECC safeguards guest uptime.

In-Memory Database
Databases like SAP HANA need expansive, fault-tolerant capacity. Fill the platform’s DIMM slots, respecting the maximum rank limit per channel (often 8 ranks) to sustain 2933MT/s. A fully loaded 12- or 16-module configuration on a dual-socket server provides several terabytes of reliable memory, enabling the entire dataset to reside in DRAM.

High-Performance Computing (HPC)
HPC applications prize bandwidth over raw capacity. Install at least one 64GB RDIMM per memory channel (e.g., 8 modules per socket) to saturate all channels. Because quad-rank DIMMs may lower speed when multiple per channel are used, verify server population guidelines to balance capacity, channel count, and achievable frequency for sustained computation.

Verified Compatibility

Stringently tested for compatibility with servers like Dell PowerEdge R750, HPE ProLiant DL380 Gen10, and Lenovo ThinkSystem SR650 V2.

FAQ

Q: Can I mix this HMAA8GR7MJR4N-WMTGAA with other memory modules of different brands or speeds?

A: Mixing RDIMMs of different brands or speeds is discouraged. Mismatched modules can cause signal integrity issues and system instability. All DIMMs should be identical in speed, rank, and timings for validated server reliability.

Q: Is this memory compatible with my Intel or AMD server platform?

A: This Hynix 64GB DDR4-2933 Registered ECC module is compatible with Intel Xeon Scalable and AMD EPYC platforms supporting DDR4-2933 RDIMMs. Always consult your server board's qualified vendor list for specific model validation.

Q: What is the recommended DIMM population order for optimal performance with this quad-rank module?

A: For quad-rank RDIMMs, populate identical modules evenly across all memory channels. Follow your server's manual to balance each channel symmetrically, maximizing bandwidth and minimizing latency. Avoid mixing different ranks in the same channel.

Q: Does this module support overclocking or XMP profiles?

A: No. This is a JEDEC-compliant DDR4-2933 Registered ECC module with fixed CL21 timings. It does not support overclocking or XMP, as server memory prioritizes data integrity and stable operation over adjustable performance profiles.

Q: What warranty and typical failure rate can I expect for this memory?

A: This module includes a 1-year warranty. Enterprise-class DDR4 RDIMMs like this Hynix model typically exhibit an annualized failure rate below 0.3% when operated within specified temperature and voltage conditions.

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