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Micron MT36KSF2G72PZ-1G4E1HE 16GB DDR3 RDIMM 1333MT/s | ECC Server RAM

MPN:MT36KSF2G72PZ-1G4E1HE By:Micron Warranty:1 year
US$103 - $112
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General

Product TypeMemory Module
Compliance StandardsRoHS
Memory Capacity16 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x4
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This 16GB DDR3-1333 Registered DIMM with ECC and a 1.35V operating voltage is purpose-built for server platforms, excelling in virtualization, memory caching, and light in-memory database workloads where data integrity and uptime are critical. Its dual-rank x4 organization enhances memory bandwidth utilization and interleaving, while the registered signal type ensures stable operation at higher capacities by reducing the electrical load on the memory controller.

Technical Specs & Insights

1. ECC memory detects and corrects single-bit errors in real time, safeguarding transactional databases and financial computations from silent data corruption.
2. Registered logic buffers command and address signals, enabling stable operation across densely populated server boards with dozens of DIMMs per node.
3. Dual Rank x4 organization interleaves access across multiple banks, maximizing sustained throughput for virtualized workloads under heavy multi-tenancy.
4. Low-voltage operation reduces overall power consumption per gigabyte, cutting energy costs and easing thermal management in large-scale data center deployments.
5. Sixteen gigabyte capacity per module allows admins to pack ample RAM into limited slots, increasing VM density without sacrificing memory headroom for each guest.

Why These Specs Matter

When you are running a dense virtualization cluster or an in-memory database like SAP HANA, memory errors are not just an inconvenience—they are a direct threat to business continuity. The Micron MT36KSF2G72PZ-1G4E1HE, a 16GB DDR3-1333 Registered DIMM, is engineered precisely for these mission-critical server environments. Its ECC technology actively detects and corrects single-bit flips caused by background radiation, preventing silent data corruption that could crash a financial transaction or violate a medical record’s integrity. The registered signal buffer is equally vital: in a fully populated 24-slot server, it stabilizes command signals so your hypervisor can seamlessly orchestrate dozens of virtual machines without address-line degradation. Operating at a cool 1.35V, this dual-rank module cuts power consumption across a rack by nearly 20 percent versus standard 1.5V memory, directly lowering your cooling overhead. For a Redis or memcached cluster where latency is currency, the dual-rank x4 organization and CL9 latency balance dense capacity with consistent bandwidth, ensuring your cache tier never becomes the bottleneck during peak load. This is not just RAM; it is risk mitigation you can measure in uptime.

Endurance & Reliability

Based on the specifications—ECC, Registered, RDIMM, 1.35 V DDR3-1333—this is a server‑grade memory module. Capacity planning for typical server workloads follows.

General Virtualization
For a host running a moderate virtual machine density, start with 64 GB (four modules) to support 10–15 typical VMs. Install one DIMM per memory channel in each CPU socket to maximise throughput and ensure balanced NUMA access. For heavier consolidation, scale to 128 GB by populating two identical modules per channel, preserving ECC advantages and enabling advanced RAS features.

In-Memory Database
In-memory databases require maximum capacity and data integrity. On a dual‑socket platform, deploy up to sixteen or more of these dual‑rank 16 GB RDIMMs to achieve 256 GB. Fill every memory channel equally with identical modules to maintain symmetric bandwidth and low latency. Avoid memory sparing or mirroring unless continuous uptime demands it, as they reduce the effective cache size available for the database working set.

High-Performance Computing
HPC workloads demand consistent bandwidth and reliability. Configure the node with two modules per channel (e.g., 8 × 16 GB for 128 GB) to enable effective interleaving and sustain 1333 MT/s throughput. For memory‑bound simulations, scale to 256 GB using all channels; the 1.35 V low‑voltage operation helps control thermals in dense clusters while maintaining full ECC protection.

Verified Compatibility

Rigorously tested server memory, compatible with Dell PowerEdge R720, HP ProLiant DL380p Gen8, Lenovo ThinkServer RD630.

FAQ

Q: Can I mix this MT36KSF2G72PZ-1G4E1HE with other memory modules of different brands or speeds?

A: Mixing RDIMMs of different brands or speeds is not recommended. It can cause signal integrity issues and system instability. All modules in a channel should be identical for guaranteed compatibility and reliable operation.

Q: Is this memory compatible with my system?

A: This 16GB DDR3-1333 Registered ECC module is designed for servers supporting 240-pin RDIMMs. It is compatible with select Intel Xeon E5-2400/2600 v1/v2 and AMD G34/C32 platforms. Verify your server's Qualified Vendor List for exact compatibility.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical DIMMs in groups matching memory channels. Typically, fill the farthest slot from the CPU per channel first. Follow your server motherboard's specific population guide to balance ranks across channels and maximize bandwidth.

Q: Does this module support overclocking or XMP profiles?

A: No. This is an enterprise-grade Registered ECC DDR3 module. It strictly adheres to JEDEC DDR3-1333/PC3-10600 specifications and does not support overclocking or XMP profiles, ensuring data integrity and 24/7 operational stability.

Q: What warranty and typical failure rate can I expect?

A: This module includes a 1-year warranty. Enterprise RDIMMs like this Micron-built module exhibit extremely low annualized failure rates, typically <0.2%, thanks to rigorous component screening and extensive pre-shipment testing under elevated temperature conditions.

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