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Micron M393B2G70BH0-BH9 16GB DDR3 DIMM 1600MT/s | ECC Registered

MPN:M393B2G70BH0-BH9 By:Micron Warranty:1 year
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General

Product TypeMemory Module
Compliance StandardsRoHS
Memory Capacity16 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1600MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL11
RankDual Rank
Quantity of Pins240-pin
RAM GenreDIMM

Engineer's Note

This Samsung 16GB DDR3-1333 Registered DIMM with ECC is purpose-built for server platforms, delivering the data integrity and reliability required for virtualization, in-memory databases, and mission-critical enterprise workloads. Its dual-rank design maximizes memory interleaving and bandwidth, while the registered signal type ensures stable operation in high-density, multi-DIMM configurations.

Technical Specs & Insights

1. ECC memory detects and corrects single-bit errors on the fly, preventing silent data corruption that could otherwise crash critical enterprise workloads or compromise financial transactions.
2. Registered signal buffering stabilizes high-capacity configurations by reducing electrical load on the memory controller, essential for maintaining uptime in dense rack servers with fully populated DIMM slots.
3. 16 GB capacity per module strikes a balance between density and cost, allowing a dual-socket server to provision ample RAM for hosting dozens of lightweight virtual machines or memory-hungry in-memory databases.
4. Dual Rank interleaving boosts effective bandwidth by alternating access across internal ranks, which accelerates analytics queries and keeps CPU pipelines fed during simultaneous multi-tenant requests.
5. 1600 MHz clock speed delivers higher throughput than legacy 1333 MHz modules, shrinking data retrieval latency for write-heavy caching layers and real-time stream processing in cloud environments.

Why These Specs Matter

When you deploy the Samsung M393B2G70BH0-BH9, a 16GB DDR3 1600MHz registered DIMM with ECC, you are directly addressing the reliability and performance mandates of modern server infrastructure—not just adding capacity. In a dense virtualization cluster, bit-flip errors in DRAM cells can silently corrupt a hypervisor’s memory state, crashing multiple guest operating systems with no clear root cause. The integrated error‑correcting code of this module detects and corrects single‑bit errors on the fly, preserving VM uptime and data integrity without performance degradation. Simultaneously, the registered signal buffer stabilizes command and address lines across fully‑populated memory channels; when you scale a dual‑socket machine to support dozens of virtual machines or an in‑memory database like Redis, that buffering eliminates electrical loading spikes that would otherwise cause unpredictable boot failures or memory training faults. The dual‑rank layout further matters: it interleaves two internal sets of DRAM banks, delivering measurably higher sustained bandwidth for transactional databases and OLAP workloads where every extra I/O operation per second translates into faster query response. Together, these features mean your weekend maintenance window is no longer consumed by chasing phantom memory exceptions—and your memory‑bound applications run closer to the metal with the consistency that true 24/7 operations demand.

Endurance & Reliability

General Virtualization
For a virtualized host running multiple VMs, density per channel is critical. Deploy six or eight identical 16 GB registered DIMMs in a balanced dual- or quad-channel configuration to reach 96–128 GB, ensuring consistent memory bandwidth and leaving expansion room. Avoid mixing ranks and populate all memory channels symmetrically to prevent NUMA penalties in multi-socket servers.

In-Memory Database
Low latency and high reliability are paramount. Install the maximum number of 16 GB dual-rank DIMMs the platform supports, typically 12 or 16 modules for 192–256 GB, to keep the entire working set in RAM. Use Lockstep or mirrored memory modes if the workload cannot tolerate uncorrected errors, trading capacity for availability on mission‑critical in‑memory stores.

High-Performance Computing
HPC clusters demand peak bandwidth per core. Populate one DIMM per channel with these dual-rank 1600 MHz modules to maintain full bus speed; using two DIMMs per channel on DDR3-1600 often forces a speed drop to 1333 MHz. For dual-socket nodes, a common sweet spot is eight modules (four per CPU, one per channel) providing 128 GB while preserving rated frequency and keeping power consumption in check.

Verified Compatibility

Rigorously tested server memory, compatible with Dell PowerEdge R720, HP DL380p Gen8, Lenovo ThinkServer RD530.

FAQ

Q: Can I mix this M393B2G70BH0-BH9 with other memory modules of different brands or speeds?

A: Mixing is strongly discouraged in servers. For multi-bit ECC reliability, use identical modules with matching rank, timing, and speed. Mixed configurations may cause training failures or silent data corruption.

Q: Is this memory compatible with my system?

A: It’s designed for DDR3 Registered ECC platforms. Compatible with Intel Xeon 5500/5600 series and AMD Opteron 6000 series. Always verify against your server board’s qualified vendor list to ensure correct platform support.

Q: What is the recommended DIMM population order for optimal performance?

A: Install identical DIMMs per channel following the board’s slot numbering. For dual-socket servers, balance capacity across sockets. Typically, populate the farthest slot from the CPU first to maintain signal integrity and enable interleaving.

Q: Does this module support overclocking or XMP profiles?

A: No. As registered server memory, it strictly follows JEDEC standards at 1.5V. Overclocking and XMP are unsupported. The design prioritizes mission-critical stability and hardware-level ECC error correction.

Q: What warranty and typical failure rate can I expect?

A: This module is backed by a 1-year warranty. Industry data shows an annualized failure rate well below 0.5% under specified conditions, ensuring reliable long-term deployment in enterprise environments.

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