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Micron MTA18ASF2G72PDZ-2G6E1SI 16GB DDR4 RDIMM 2666MT/s | Reliable ECC

MPN:MTA18ASF2G72PDZ-2G6E1SI By:Micron Warranty:1 year
US$145 - $158
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General

Product TypeMemory Module
Memory Capacity16 GB
Memory TechnologyDDR4
Product Voltage1.2V
RAM Speed2666MHz
RAM StandardDDR4-2666/PC4-21300
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL19
RankDual Rank x8
Quantity of Pins288-pin
RAM GenreRDIMM

Engineer's Note

This Micron 16GB DDR4-2666 RDIMM is engineered for server platforms, providing registered ECC memory ideal for virtualization, in-memory databases, and data-integrity-critical workloads. Its dual-rank x8 configuration and 1.2V power efficiency enhance memory bandwidth and stability under heavy load, while the registered signal type ensures reliable operation in densely populated DIMM slots.

Technical Specs & Insights

1. Registered signal type ensures stable command and address signal integrity across fully populated server boards, preserving uptime in multi-slot configurations that demand coordinated access to massive memory pools.
2. ECC error correction continuously detects and corrects single-bit memory faults in real time, safeguarding transactional databases and in-memory analytics from silent data corruption.
3. Dual Rank x8 organization increases bank-level parallelism, sustaining high throughput for virtualization hosts where numerous VMs contend for shared memory bandwidth simultaneously.
4. Low 1.2V operation reduces overall power and thermal load per DIMM, enabling dense server farms to scale memory capacity without exceeding rack power budgets or cooling limits.
5. DDR4-2666 speed delivers balanced bandwidth per core in mainstream dual-socket servers, matching typical processor memory controller sweet spots for efficient data flow under sustained workloads.

Why These Specs Matter

Based on the Registered DIMM genre, ECC support, and 288-pin form factor, this is a server-class memory module engineered for enterprise infrastructure. For IT managers running virtualization clusters, the ECC error-correction is non-negotiable. A single bit-flip in a multi-tenant hypervisor environment can silently corrupt a financial transaction or crash dozens of virtual machines; ECC detects and corrects these errors in real time, directly preserving business continuity and data trust. The registered signal buffer addresses a critical pain point when populating dense server boards: without a register to redrive address and command signals, high-capacity configurations suffer signal degradation and instability. This RDIMM lets you confidently scale to 16GB per stick and beyond, maintaining rock-solid uptime. When deploying in-memory databases like SAP HANA or Redis clusters, dual-rank x8 organization shines. It enables rank interleaving, where the memory controller can issue commands to one rank while another completes an operation, effectively hiding latency and boosting transactional throughput under heavy OLTP loads. Combined with the low 1.2V power draw, which reduces thermal stress in packed racks, this module translates directly into lower TCO, fewer uncorrectable errors, and consistently faster response times for your mission-critical services.

Endurance & Reliability

General Virtualization
For a virtualization host, populate all memory channels with identical 16 GB registered ECC modules to maximize capacity and balanced bandwidth. In a dual‑socket server with six channels per CPU, installing twelve modules delivers 192 GB, comfortably supporting dozens of mixed‑workload VMs. Avoid leaving channels empty, as unbalanced configurations degrade NUMA performance and memory throughput.

In‑Memory Database
In‑memory databases like SAP HANA or Redis demand both large capacity and data integrity. Populate every DIMM slot with these 16 GB RDIMMs to reach 256 GB–512 GB or higher, ensuring the entire dataset resides in RAM. The ECC and registered signaling protect against in‑memory errors, while dual‑rank x8 modules provide the reliability and moderate latency expected for transactional workloads.

High Performance Computing
HPC applications are often bandwidth‑sensitive. Equip each memory channel with one 16 GB RDIMM to maintain maximum native speed (2666 MT/s) without throttling that can occur with higher densities per channel. A dual‑socket node with 12 populated channels yields 192 GB of fast, balanced memory, minimizing inter‑NUMA access penalties and delivering the predictable throughput needed for tightly‑coupled parallel tasks.

Verified Compatibility

Rigorously tested, this 16GB DDR4-2666 ECC RDIMM is compatible with Dell PowerEdge R760, R750, R660, and similar servers.

FAQ

Q: Can I mix this MTA18ASF2G72PDZ-2G6E1SI with other memory modules of different brands or speeds?

A: Mixing registered ECC modules of different brands, speeds, or ranks is not recommended. It can cause signal integrity issues, instability, or the system reverting to the lowest common speed, often disabling ECC functions.

Q: Is this memory compatible with my system?

A: This RDIMM is intended for servers using Intel Xeon Scalable or AMD EPYC platforms with DDR4-2666 support. Verify your server board's QVL and ensure registered ECC 1.2V modules are specified.

Q: What is the recommended DIMM population order for optimal performance?

A: Refer to your server motherboard manual. Typically, populate identical modules per channel starting with the farthest slot from the CPU, balancing channels equally to maximize bandwidth and avoid memory performance degradation.

Q: Does this module support overclocking or XMP profiles?

A: No. As an enterprise-grade registered ECC module, it adheres strictly to JEDEC DDR4-2666 standards. Overclocking and XMP profiles are unsupported to guarantee data integrity and system stability in server environments.

Q: What warranty and typical failure rate can I expect?

A: This Micron module carries a one-year warranty. Typical annualized failure rate (AFR) is well below 0.5% under standard operating conditions, backed by rigorous component screening and end-of-line testing for mission-critical workloads.

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