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Micron MT9JSF25672AZ-1G4D1 2GB DDR3 UDIMM 1333MT/s | Server ECC Memory

MPN:MT9JSF25672AZ-1G4D1 By:Micron Warranty:1 year
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General

ModelMT9JSF25672AZ-1G4D1
Product TypeMemory Module
Compliance StandardsRoHS
Memory Capacity2 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL9
RankSingle Rank x8
Quantity of Pins240-pin
RAM GenreUDIMM

Engineer's Note

This unbuffered ECC DDR3 module is designed for entry-level servers and workstations where data integrity is critical. Its single-rank x8 configuration and error-correcting code support provide robust reliability for light virtualization, file storage, or small database workloads while maintaining broad UDIMM compatibility.

Technical Specs & Insights

1. On-the-fly single-bit error correction neutralizes silent data corruption risks, delivering the rock-solid uptime demanded by always-on light server workloads such as DNS and Active Directory.
2. Unbuffered signal topology slashes access latency and keeps per-watt efficiency high for entry-level servers and NAS platforms where rapid small-file transfers directly impact user productivity.
3. The single-rank design minimizes bus loading, letting budget server boards populate all DIMM slots at full rated speed and maintain stable operation under continuous duty.
4. Its modest memory capacity strikes a perfect balance for dedicated appliance-like roles—firewall, caching proxy, or lightweight hypervisor—lowering both idle power and attack surface.
5. Stable mainstream DDR3 frequency provides consistent bandwidth headroom to handle concurrent client requests without stuttering, sustaining responsive business applications on aging but reliable server fleets.

Why These Specs Matter

Designed for single-socket servers and workstations where data integrity and low latency intersect, the Micron MT9JSF25672AZ-1G4D1 UDIMM delivers four defining characteristics that directly address real-world failure points: ECC protection, an unbuffered architecture, CAS 9 timing, and a single-rank x8 configuration. In a virtualized cluster running multiple business‑critical VMs, ECC is non‑negotiable; it catches and corrects single‑bit flips caused by background radiation before they silently corrupt a hypervisor page or trigger an unexplained system crash. This means continuous uptime for your domain controller or customer portal, not a 3 a.m. rebuild. For memory‑resident databases such as Redis or an in‑memory OLTP engine, every nanosecond of added delay penalizes transaction throughput. The unbuffered command path eliminates the register clock lag inherent in registered DIMMs, and the tight CL9 column access latency ensures read commands are served with minimal stall cycles, letting you squeeze lower query response out of the same 1333MT/s bandwidth. The single‑rank x8 layout keeps the memory bus electrically clean, avoiding the signal degradation that dual‑rank stacks can introduce under sustained load. Whether your hypervisor is shuttling virtual disk I/O or the database engine is scanning a multi‑gigabyte hash table, this validated stability prevents marginal timing errors from turning into data consistency nightmares.

Endurance & Reliability

This module is a server-class DDR3-1333 ECC unbuffered UDIMM, designed for entry-level servers and workstations that require data integrity. Capacity planning with this 2 GB single‑rank module demands careful population to meet workload needs.

General Virtualization
Populate at least six modules (12 GB) across three memory channels for balanced dual‑channel or triple‑channel interleaving. This setup supports 4–6 light VMs. For consolidation of more VMs, plan to fill all available slots and consider migrating to higher‑capacity RDIMMs if the board supports both.

In‑Memory Database
Since in‑memory databases thrive on capacity and low latency, install the maximum supported number of these ECC UDIMMs—commonly eight modules for 16 GB in quad‑channel or dual‑channel boards—to hold entire datasets. Maintain a symmetrical population across all memory channels to avoid bandwidth contention and to sustain consistent query response times.

High‑Performance Computing (HPC)
For memory‑bandwidth‑sensitive HPC tasks, populate one module per channel on all channels (e.g., four modules for 8 GB on a quad‑channel platform) to achieve peak aggregate throughput. Maximising channel parallelism reduces per‑core latency in parallel simulations and numerical workloads, though total capacity may limit large‑node computations; plan to use identical 2 GB sticks exclusively to preserve single‑rank command efficiency.

Verified Compatibility

Rigorously tested, this DDR3 ECC UDIMM fits Dell PowerEdge T110 II, HP MicroServer Gen8, Lenovo ThinkServer TS140.

FAQ

Q: Can I mix this MT9JSF25672AZ-1G4D1 with other memory modules of different brands or speeds?

A: Mixing is not recommended for server environments. Mismatched speeds or brands may force the memory controller to downgrade to the lowest common speed, potentially causing ECC errors or instability under load.

Q: Is this memory compatible with my server?

A: This DDR3 ECC UDIMM is designed for single-socket Intel Xeon E3 series or AMD equivalent platforms using C202/C204/C206 chipsets. Verify your server board supports 2GB unbuffered ECC modules before purchasing.

Q: What is the recommended DIMM population order for optimal performance?

A: For this single-rank module, populate slots matching the first channel starting with the slot farthest from the CPU. Follow your server board's manual to enable interleaving and maintain balanced memory channels.

Q: Does this module support overclocking or XMP profiles?

A: No. This is a JEDEC-compliant DDR3-1333 server memory module. It does not support XMP profiles or overclocking, as reliability and data integrity are prioritized over performance tuning in server platforms.

Q: What warranty and typical failure rate can I expect?

A: This module includes a one-year warranty. Enterprise-class UDIMM ECC memory typically exhibits an annualized failure rate (AFR) below 0.5% when operated within specified voltage and thermal limits.

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