General

Engineer's Note

Designed for server environments, this 4GB DDR3-1333 RDIMM with ECC and registered signal technology ensures data integrity and system stability under sustained memory loads, making it an ideal fit for virtualization platforms and in-memory databases. Its dual-rank x4 organization and CL9 latency deliver balanced performance and reliable error correction in multi-DIMM configurations, maximizing throughput for enterprise workloads.

Technical Specs & Insights

1. ECC memory corrects single-bit errors in real time, eliminating silent data corruption that could crash virtualized workloads and compromise financial transaction logs.
2. Registered buffering isolates the memory controller from electrical loading, enabling fully populated servers to maintain signal stability during peak consolidation loads.
3. Dual rank x4 organization leverages bank-level parallelism to keep all memory channels saturated, delivering consistent bandwidth for dense virtual machine environments.
4. This frequency class supplies the ideal throughput ceiling for multi-core server CPUs, preventing I/O bottlenecks in high-concurrency database operations.
5. A CAS latency of nine cycles sharpens memory responsiveness, reducing read delays for in-memory analytics and giving latency-sensitive enterprise applications a measurable performance lift.

Why These Specs Matter

When you deploy a mission‑critical virtualization cluster or an in‑memory database, the MT36JSZF51272PZ-1G4G 4GB DDR3‑1333 RDIMM is not just another memory module — it is your safeguard against silent data corruption and performance collapse. Its ECC engine continuously corrects single‑bit errors and detects multi‑bit faults, a non‑negotiable requirement when a flipped bit in a cached financial transaction or a hypervisor page table could crash dozens of virtual machines. The registered buffer isolates the memory controller from the electrical load of multiple DIMMs, allowing you to populate all 24 slots in a 2U server without signal degradation — exactly what dense virtualization farms demand. Dual‑rank x4 organization then enables rank interleaving, paralleling read/write commands to slash latency and lift bandwidth for latency‑sensitive workloads like SAP HANA or Redis, where in‑memory throughput directly governs query response times. Finally, the 1.5V low‑voltage design combined with the registered architecture reduces heat dissipation per DIMM, lowering cooling overhead in densely packed racks and improving long‑term total cost of ownership. In essence, this module turns raw capacity into consistent, enterprise‑grade stability.

Endurance & Reliability

General Virtualization
For general virtualization, memory capacity and reliability are paramount. Populate all available DIMM slots with these 4GB ECC Registered RDIMMs to achieve a balanced, high-capacity memory pool—typically 96GB in a dual‑socket server with 24 slots. Distributing identical Dual Rank modules evenly across all memory channels ensures consistent performance and fault tolerance for multiple concurrent VMs.

In-Memory Database
In‑memory databases demand maximum capacity and uncompromising data integrity. Deploy a fully populated configuration using these ECC RDIMMs to build a resilient, error-correcting memory subsystem. Configure memory interleaving across identical modules (same rank, speed, and CAS latency) to reduce latency and boost throughput, allowing the database to hold entire datasets in RAM without compromising stability.

High-Performance Computing
HPC workloads benefit from high memory bandwidth. Install these DDR3-1333 RDIMMs in a balanced multi‑channel layout—for instance, three modules per channel on a triple‑channel platform—to maximize aggregate bandwidth. Using only matched Dual Rank x4 parts in each channel avoids loading imbalances and maintains optimal signaling, which is critical for sustained throughput in simulation and modeling workloads.

Verified Compatibility

Server-grade, rigorously tested: compatible with Dell PowerEdge R710/R720, HP DL380 G7/G8, IBM x3650 M4.

FAQ