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Micron MT16KTF51264HZ-1G4M1 4GB DDR3 SoDIMM 1333MHz | Low-Power SODIMM

MPN:MT16KTF51264HZ-1G4M1 By:Micron Warranty:1 year
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General

Product TypeMemory Module
Compliance StandardsRoHS
Memory Capacity4 GB
Memory TechnologyDDR3
RAM Speed1333
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingNon-ECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL9
RankDual Rank x8
Quantity of Pins204-pin
RAM GenreSoDIMM

Engineer's Note

This is a standard DDR3-1333 SoDIMM designed for notebook and mobile workstation upgrades. Its dual-rank x8 organization with unbuffered, Non-ECC signaling ensures broad compatibility and stable plug-and-play operation, while the CL9 latency delivers responsive performance for everyday productivity and multitasking.

Technical Specs & Insights

1. SoDIMM form factor with a 204-pin connector enables a tool-free drop-in installation, ensuring broad compatibility with virtually any mainstream notebook or all-in-one thin client.
2. A four-gigabyte capacity supplies sufficient headroom for web browsing, office suites, and video conferencing, eliminating the stutter of disk-swapping on lightweight operating systems.
3. The 1333 MT/s data rate strikes a thermal-aware balance, delivering steady HD streaming and application multitasking without overburdening compact laptop cooling designs.
4. CAS 9 column-access latency shortens the wait cycles for data retrieval, translating into crisper program starts and more fluid window switching during casual on-the-go productivity.
5. Dual Rank x8 banking interleaves internal memory arrays to sustain higher throughput under mixed workloads, keeping voice calls and cloud docs responsive even when a half-dozen tabs stay active.

Why These Specs Matter

Designed specifically for notebooks and mobile workstations, the Micron MT16KTF51264HZ-1G4M1 module gives you exactly what matters most when upgrading portable systems. The 204-pin SODIMM form factor slips directly into tight chassis ranging from ultra-thin laptops to entry-level workstations, eliminating compatibility guesswork. As an unbuffered, non-ECC memory, it forgoes the power-hungry register and error-correction circuitry found in server RAM, directly reducing electrical load on the memory controller. That translates into extended battery runtime during long flights or back-to-back meetings. Under the hood, the dual-rank x8 organization interleaves access across two internal ranks, allowing the system to queue new commands while one rank finishes its cycle. When you juggle a large spreadsheet, a video conference, and a browser with dozens of tabs, that extra parallelism keeps application switching fluid rather than bogging down. The DDR3-1333 speed and CL9 latency strike the balance between responsive everyday performance and a stable upgrade path for aging notebooks that cannot accept faster DDR3L or DDR4 modules. Instead of suffering through sluggish load times and application hangs, a simple memory swap with this proven standard gives your mobile platform a new lease on productivity, whether you are drafting reports on a slimbook or running lightweight CAD reviews on a portable workstation.

Endurance & Reliability

Laptop Upgrade
For basic laptop upgrades, this 4GB DDR3-1333 SO-DIMM is ideal for replacing a single failing module or adding to an empty slot. Pair it with an identical module (same speed, CAS latency, and dual-rank x8 organization) to enable dual‑channel mode and reach 8GB, which noticeably improves general multitasking on older notebooks. Always verify your laptop supports 4GB per slot, as some older chipsets are limited to 2GB modules.

Mobile Workstation
A single 4GB stick alone is insufficient for professional workloads like CAD, 3D rendering, or large datasets. For a mobile workstation, install two of these modules to achieve 8GB total—the practical minimum for entry-level content-creation tasks. However, if your system supports 8GB SO‑DIMMs, consider retiring this part and maximizing capacity to 16GB or 32GB using higher‑density modules, ensuring the dual‑rank configuration maintains bandwidth for memory‑intensive applications.

Ultrabook Power Saving
This standard DDR3‑1333 module runs at 1.5V, while many ultrabooks demand low‑voltage DDR3L (1.35V) for thermal and power efficiency. Before installing, confirm your ultrabook’s voltage tolerance—inserting a 1.5V stick into a DDR3L‑only slot may cause instability or prevent booting. When compatibility is confirmed, a single 4GB upgrade can be an economical way to extend the service life of a lightweight notebook, but battery runtime will be marginally shorter compared to a native low‑voltage part.

Verified Compatibility

Rigorously tested, compatible with notebooks like Lenovo ThinkPad T430 and Dell Latitude E6430.

FAQ

Q: Can I mix this MT16KTF51264HZ-1G4M1 with other memory modules of different brands or speeds?

A: Mixing unbuffered non-ECC SO-DIMMs of different brands or speeds is not recommended. It may cause instability or prevent booting in notebooks, as they demand strict timing and voltage matching.

Q: Is this memory compatible with my system? (e.g., older ThinkPad, Dell Latitude, or HP EliteBook)

A: This DDR3-1333 PC3-10600 204-pin SO-DIMM fits notebooks with Intel 5/6/7 series chipsets or AMD A-series platforms. Verify your model supports 4 GB dual-rank x8 modules and standard 1.5 V.

Q: What is the recommended DIMM population order for optimal performance?

A: If your notebook has two slots, install matching pairs for dual-channel performance. With a single module, use slot 0 or the primary slot per the service manual to ensure proper detection and stability.

Q: Does this module support overclocking or XMP profiles?

A: No. As a JEDEC-compliant DDR3-1333 CL9 SO-DIMM, it does not support overclocking or XMP. It runs at fixed standard timings to guarantee compatibility and reliability in mobile platforms.

Q: What warranty and typical failure rate can I expect?

A: This module includes a one-year warranty. The typical annualized failure rate is below 0.5%, reflecting mature DDR3 manufacturing. We replace defective units promptly upon confirmed failure.

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