General

Engineer's Note

Designed for enterprise-class servers, this 64GB DDR4-3200 RDIMM with ECC and a registered signal type delivers exceptional data integrity and stability for memory-intensive workloads such as virtualization and in-memory databases, while its dual-rank x4 configuration maximizes bank-level parallelism to sustain high throughput under heavy load. The CL22 latency and 1.2V operating voltage further optimize power efficiency without compromising the reliable performance required in multi-socket platforms.

Technical Specs & Insights

1. ECC protection silently corrects single-bit memory errors, safeguarding data integrity in mission-critical financial transactions and long-running analytics jobs.
2. Registered signal buffering maintains clean command and address lines, allowing massive memory populations to scale without compromising stability in dense virtualization clusters.
3. High-density module capacity enables far greater virtual machine consolidation per server, directly reducing hardware footprint and operational costs.
4. Elevated memory bandwidth supports rapid in-memory processing and concurrent workload execution, eliminating bottlenecks under high core-count CPU demands.
5. Dual rank interleaving maximizes channel utilization and lowers effective latency, sustaining consistent throughput in database-heavy enterprise environments.

Why These Specs Matter

When you deploy this Micron 64GB DDR4-3200 RDIMM in your data center, you are not just adding capacity—you are fortifying the reliability of your entire infrastructure. Start with ECC error correction: in a dense virtualization cluster, a single undetected bit flip can corrupt a hypervisor’s memory page and silently crash dozens of guest machines. ECC catches and corrects those single-bit errors in real time, turning a potential outage into a non-event. The registered buffer is equally critical; it decouples the memory controller from the electrical load of the DRAM chips, allowing you to populate all channels at full 3200MT/s without signal degradation. That stability means your server maintains peak throughput even when fully loaded. Then consider the dual-rank x4 organization: it interleaves two 64-bit banks per module, delivering measurably higher sustained bandwidth under heavy queue depths—exactly what an in-memory database like Redis or SAP HANA demands when millions of operations per second hit the dataset. Finally, 64GB capacity per stick allows you to reach 512GB or more in typical dual-socket systems, giving your virtual machines room to grow while keeping DIMM slot counts low, reducing power draw and preserving the 1.2V thermal envelope. For a business that lives on application uptime and transactional speed, this module translates directly into cleaner data, fewer performance anomalies, and a lower cost per virtual machine.

Endurance & Reliability

General Virtualization
For a consolidated virtualization host, install four 64 GB RDIMMs (256 GB total) in a dual-socket system, populating one DIMM per channel to deliver balanced memory bandwidth for diverse VMs. Scale to eight modules (512 GB) as workloads grow, always maintaining symmetric NUMA layouts to avoid remote-memory latency.

In-Memory Database
Maximize capacity by filling all available DIMM slots—for example, 24 modules yielding 1.5 TB of total memory for large in-memory datasets. Expect speed to drop to DDR4-2933 at two DIMMs per channel, but prioritize capacity and active memory interleaving; the 2Rx4 rank structure benefits in-memory analytics with moderate parallelism.

High Performance Computing
Adopt a one-DIMM-per-channel approach using eight 64 GB modules (512 GB) to sustain full DDR4-3200 speed on an 8-channel platform. The dual-rank x4 RDIMM offers strong signal integrity and bank-level parallelism for HPC codes. Add a second set per channel only if memory-footprint demands outweigh the modest frequency trade-off.

Verified Compatibility

Rigorously tested for Dell PowerEdge R750, HPE ProLiant DL380 Gen10 Plus, Lenovo ThinkSystem SR650 V2 compatibility.

FAQ