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| Product Type | Memory Module |
|---|---|
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Unbuffered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 244-pin |
| RAM Genre | UDIMM |
Designed for entry-level servers and workstations, this 8GB DDR3-1600 ECC Unbuffered UDIMM operates at a power-efficient 1.35V and integrates dual-rank x8 organization to improve memory interleaving and bandwidth under multi-threaded workloads. Its ECC error correction and unbuffered signal architecture make it ideal for platforms requiring data integrity and stable operation in lightweight virtualization, file services, or small database applications.
1. ECC error correction guards against silent data corruption, preserving transactional integrity and system uptime for always-on business-critical services.
2. Dual rank x8 organization interleaves memory access across banks, sustaining consistent throughput under multi-VM consolidation where parallel I/O demands spike.
3. Low 1.35V operation slashes power draw and thermal stress inside dense rack environments, lowering cooling overhead and extending infrastructure lifespan.
4. Unbuffered UDIMM architecture delivers a cost-conscious pathway to ECC reliability, well-suited for lightweight hosting or edge-server nodes that prioritize data protection over massive capacity scaling.
5. 1600MHz speed supplies responsive bandwidth for concurrent mid-sized workloads, keeping collaboration platforms and small database instances performing smoothly under daily user loads.
The Micron MT18KBZS1G72AKZ-1G6E1ZE is an 8GB DDR3-1600 module purpose‑built for entry‑level server environments, identifiable by its ECC, 244‑pin UDIMM layout, and 1.35V spec. It directly addresses four critical pain points for IT operators running virtualized clusters and in‑memory databases. First, hardware ECC continuously corrects single‑bit errors caused by background radiation; when multiple VMs share physical memory, a single uncorrected flip could silently corrupt a hypervisor state or a Redis dataset, causing cascading outages. Second, the dual‑rank x8 organization enables rank interleaving that boosts sustained bandwidth by over 10%, preventing thrashing when a hypervisor runs several guest instances alongside a live backup job. Third, the 1.35V low‑voltage design cuts power draw and heat output by roughly 15% compared to standard 1.5V modules, which in dense 2U server farms translates directly into lower cooling overhead and longer component lifespan. Fourth, the unbuffered architecture with CL11 latency keeps access times extremely low, an essential advantage for latency‑sensitive database transactions while guaranteeing full compatibility with Intel Xeon E3 and similar single‑socket platforms. These traits transform a routine memory upgrade into a strategic reliability and efficiency gain—whether you are consolidating a virtualized web stack or accelerating a memory‑resident database, this module delivers the data integrity, throughput, and energy savings that define resilient small‑business server infrastructure.
Laptop Memory Module Identified
This 8GB DDR3L-1600 ECC Unbuffered SODIMM (1.35V) is designed for mobile systems requiring data integrity. Below are capacity planning guidelines for typical laptop scenarios.
Laptop Upgrade
For older laptops with a single 4GB or 8GB module, adding a second identical 8GB stick enables dual‑channel mode, boosting integrated graphics and multitasking performance. If only one slot is available, replace the existing module with this 8GB unit for a straightforward capacity doubling.
Mobile Workstation
Engineering and data‑analysis software benefits from ECC protection and higher capacity. Populate both SODIMM slots with two of these 8GB modules for 16GB, or opt for compatible 16GB ECC SODIMMs to reach 32GB. Balancing dual‑rank modules across channels ensures stable, error‑corrected operation under sustained loads.
Ultrabook Power Saving
Thanks to its 1.35V low‑voltage design, this module extends battery life in thin‑and‑light systems. Deploy a single 8GB stick to minimize power draw while maintaining adequate responsiveness for office suites, web browsing, and video streaming—ideal for users prioritizing endurance over peak throughput.
Rigorously tested, this 8GB DDR3L ECC UDIMM fits Dell PowerEdge R210 II, T20, HP MicroServer Gen8, Lenovo TS140.
Q: Can I mix this MT18KBZS1G72AKZ-1G6E1ZE with other memory modules of different brands or speeds?
A: Mixing ECC UDIMMs from different brands or with varying speeds is not recommended. For stable operation on server platforms, use identical modules to avoid timing conflicts and potential memory errors.
Q: Is this memory compatible with my system?
A: This module suits servers/workstations supporting DDR3 ECC Unbuffered DIMMs at 1.35V. Verify compatibility with Intel Xeon E3/E5 or AMD Opteron platforms requiring PC3-12800E UDIMMs before purchase.
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical DIMMs in the same color slots across memory channels first, following your server board’s manual. Typically, start with slot 1A, 1B for dual-channel operation to maximize throughput.
Q: Does this module support overclocking or XMP profiles?
A: No, this is a JEDEC-compliant server ECC UDIMM running at standard DDR3-1600 timing (CL11). It does not support XMP profiles or overclocking features common to consumer desktop memory.
Q: What warranty and typical failure rate can I expect?
A: This memory comes with a one-year warranty. Built with high-quality ECC-grade components, its typical failure rate is very low under normal server operating conditions and rated voltages.