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Micron MT4KTF25664HZ-1G6E1 2GB DDR3 SoDIMM 1600 | Low-Power SODIMM

MPN:MT4KTF25664HZ-1G6E1 By:Micron Warranty:1 year
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General

Product TypeMemory Module
Compliance StandardsRoHS
Memory Capacity2 GB
Memory TechnologyDDR3
RAM Speed1600
RAM StandardDDR3-1600/PC3-12800
Error IdentifyingNon-ECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL11
RankSingle Rank x16
Quantity of Pins204-pin
RAM GenreSoDIMM

Engineer's Note

This 2 GB DDR3-1600 SO-DIMM is a non-ECC, unbuffered module purpose-built for upgrading legacy notebooks and mobile workstations, delivering straightforward plug-and-play compatibility across a wide range of older platforms. Its single-rank x16 configuration and standard CL11 latency promote lower power draw and stable signal integrity, making it an efficient choice for extending the life of systems running basic productivity and lightweight multitasking workloads.

Technical Specs & Insights

1. The SoDIMM form factor slips seamlessly into compact notebook chassis, enabling a tool-free memory swap that instantly revives aging ultraportables without a service center.
2. DDR3 technology guarantees broad compatibility with a massive installed base of legacy laptops, turning a simple component refresh into a reliable plug-and-play productivity boost.
3. A 2 GB capacity expands the headroom for lightweight multitasking, letting office apps and browser tabs coexist without constant page-file thrashing under frugal operating systems.
4. The 1600 MT/s transfer rate feeds the CPU with data briskly, cutting application wake-up times and preserving a fluid, lag-free feel during day-to-day mobile workflows.
5. CL11 low-latency timings shrink the gap between command and response, which translates to snappier window switching and quicker program starts on battery-conscious notebook platforms.

Why These Specs Matter

When upgrading an aging laptop or equipping a thin-and-light notebook for reliable mobile productivity, the Micron MT4KTF25664HZ-1G6E1 SODIMM proves invaluable due to four defining characteristics. Its Non-ECC Unbuffered design directly addresses the battery-life anxiety common among mobile users; without error correction circuitry and register chips, the module draws less power and generates minimal heat, extending runtime during back-to-back meetings or long flights. The DDR3-1600 speed and CL11 latency deliver responsive performance, whether multitasking between cloud apps and video conferences on a business ultrabook or editing documents on a revived older laptop. The single-rank x16 layout boosts compatibility and lowers power draw on the memory controller, critical for flawless detection in compact notebooks where efficiency is paramount. Ultimately, the 204-pin small-outline design ensures a straightforward, no-tools upgrade, transforming a sealed consumer device into a more capable daily driver. This memory is the practical foundation for lasting portability and reliable everyday computing.

Endurance & Reliability

Laptop Upgrade
The given module is a 2GB DDR3-1600 SoDIMM, typical for older notebooks. For a meaningful upgrade, replace the single 2GB stick with a matched pair of 4GB or 8GB modules to reach 8GB or 16GB, doubling or quadrupling capacity while enabling dual‑channel operation for improved integrated graphics and multitasking. Installing two identical SO‑DIMMs ensures stable, symmetric memory interleaving.

Mobile Workstation
Professional applications like CAD, 3D modeling, and large dataset analysis demand maximum memory. Populate both SO‑DIMM slots with the highest supported density—typically 8GB per slot for a total of 16GB on DDR3 platforms—to prevent swapping and sustain performance under heavy workloads. Verify the chipset’s maximum capacity limit, as some older mobile workstations cap at 16GB despite physical slot availability.

Ultrabook Power Saving
Thin-and-light systems benefit from low‑voltage DDR3L variants that operate at 1.35V instead of 1.5V, extending battery life by reducing power draw. When upgrading an Ultrabook, select DDR3L-1600 SO‑DIMMs even if the board supports standard DDR3, as the lower voltage generates less heat and eases thermal constraints in compact chassis. A single 8GB low‑voltage module often provides the best balance of capacity and energy efficiency for on‑the‑go productivity.

Verified Compatibility

Tested and verified for compatibility with notebooks like Dell Latitude E6430, Lenovo ThinkPad T430, and HP EliteBook 8470p.

FAQ

Q: Can I mix this MT4KTF25664HZ-1G6E1 with other memory modules of different brands or speeds?

A: Mixing modules is not recommended for laptops. Different brands or speeds may cause instability. To ensure reliable operation, always install modules with identical specs, preferably in matched kits.

Q: Is this memory compatible with my laptop? Which models or platforms are supported?

A: This 204-pin DDR3 SoDIMM fits notebooks with DDR3 slots supporting PC3-12800. Verify your laptop supports 2 GB single-rank modules and Non-ECC unbuffered memory. Check your manual for the exact generation.

Q: What is the recommended DIMM population order for optimal performance in a laptop?

A: Install this module into the primary slot. For dual-channel capability, populate both slots with identical modules. Single-channel operation is expected when used alone and still provides adequate performance for dual-core mobile platforms.

Q: Does this module support overclocking or XMP profiles?

A: No, this module adheres to JEDEC DDR3-1600 standard timings and does not support overclocking or XMP. It runs at rated speed with CL11 latency, which is typical for stable operation in thermally constrained laptops.

Q: What warranty and typical failure rate can I expect for this memory?

A: It includes a one-year warranty. Typical failure rates for premium DDR3 SoDIMMs are extremely low, often below 0.2% annually under normal use, ensuring reliable long-term performance in business and consumer notebooks.

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