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| Brand | Samsung |
|---|---|
| Model | T9 |
| Capacity | 1 TB |
| Usage Class | Portable / Consumer |
| Host Interface | USB 3.2 Gen 2x2 |
|---|---|
| Total Interface Bandwidth | 20 Gb/s |
| Form Factor | Portable |
|---|
| NAND Flash | Samsung V-NAND 3-bit TLC |
|---|---|
| Drive Writes Per Day | 0.3 |
| Total Bytes Written | 600 TBW |
| Sequential Read | 2000 MB/s |
|---|---|
| Sequential Write | 1950 MB/s |
| Random Read IOPS | 110000 |
| Random Write IOPS | 110000 |
| Average Latency | 80 μs |
| Mean Time Between Failures | 1.5 Million Hours |
|---|---|
| Uncorrectable Bit Error Rate | 1.0×10⁻¹⁷ |
| Power Loss Protection | No |
| MPN | MU-PC1T0T/AM |
|---|
For engineers moving up from MU-PC1T0T/AM, the Samsung T9 1TB (MU-PG1T0B/AM) delivers a clear generational leap with USB 3.2 Gen 2x2 connectivity and up to 2000/1950 MB/s sequential read/write performance—nearly doubling large-file transfer throughput over the previous generation. Backed by Samsung V-NAND 3-bit TLC, 110,000/110,000 IOPS, and 600 TBW endurance, it is the stronger choice for high-ingest field capture, scratch media workflows, and fast portable dataset transport where both sustained speed and write durability matter.
With an endurance rating of 600 TBW and 0.3 DWPD, the MU-PG1T0B/AM can support about 164 GB of writes per day over a 10-year period, which is more than sufficient for typical OS boot, office, monitoring, and general read-heavy application workloads. In practical terms, for use as a system drive or in light-to-moderate business environments, this level of endurance provides long service life with comfortable write headroom under normal operating conditions. For reliability, the specified UBER of 1.0E-15 means the drive is designed for a very low unrecoverable bit error rate, helping ensure strong data integrity during large-volume reads and routine enterprise operation. This model does not include power-loss protection (PLP), so while it is well suited for standard applications, environments with frequent unexpected power interruptions or write-cache-sensitive transactions should use proper system-level power protection such as UPS or controlled shutdown design.
1. The USB 3.2 Gen 2x2 interface, paired with up to 2000 MB/s sequential read performance, enables rapid transfer of large datasets and significantly shortens backup, media ingest, and edge-deployment windows.
2. With 110,000 K IOPS random read capability, the drive can accelerate small-block access patterns common in virtual desktops, analytics caches, and metadata-heavy enterprise workloads.
3. Rated at 0.3 DWPD, this SSD is best aligned with read-centric business use cases such as content distribution, external enterprise storage, and frequent access to reference datasets rather than sustained write-intensive logging.
4. Samsung V-NAND 3-bit TLC provides a strong balance of capacity, cost efficiency, and dependable flash behavior, making it well suited for scaling high-volume professional and enterprise storage deployments.
5. A typical latency of 80 µs helps reduce storage response time, improving application snappiness and delivering more consistent performance for interactive workflows and time-sensitive data access.
Lower-capacity reference: None in the same MU-PG series; 1 TB is the entry capacity. Higher-capacity reference: 2 TB, MPN MU-PG2T0B/AM. In the MU-PG family, 1 TB is the practical sweet spot because it already delivers essentially the same sequential read/write behavior and similar random IOPS as the larger capacities, while avoiding the price step-up to 2 TB. As the entry model, it offers enough usable headroom for operating systems, active project data, logs, and near-term growth without feeling cramped like typical sub-1 TB deployments. For many organizations, it is best suited to edge servers, compact database replicas, or branch-office infrastructure, such as supporting about 30 to 50 light application or virtual desktop instances.
Q: Is MU-PG1T0B/AM suitable for a write-heavy database server?
A: No. With 0.3 DWPD, 600 TBW, TLC NAND, and no power loss protection, MU-PG1T0B/AM is better suited for portable storage and light-to-moderate workloads, not write-heavy database server use.
Q: How many full drive writes per day can it actually endure over its warranty period?
A: It is rated for 0.3 DWPD, meaning about 0.3 full drive writes per day on the 1 TB capacity over the warranty period, equivalent to roughly 300 GB of writes daily.
Q: Does it include power loss protection (PLP) and why is that critical?
A: No, it does not include PLP. PLP is critical in server environments because it helps prevent in-flight data loss and metadata corruption during sudden power failures or unexpected shutdowns.
Q: What RAID level is recommended for this SSD?
A: For general use, RAID 1 or RAID 10 is recommended for better redundancy and performance balance. Avoid parity-heavy RAID for sustained writes, especially since this model is not optimized for enterprise workloads.