Secure payments
Standard refund policy
Trade Assurance
| Brand | Samsung |
|---|---|
| Model | 9100 PRO |
| Capacity | 4 TB |
| Usage Class | Enterprise / Data Center Read Intensive |
| Host Interface | PCIe Gen5 x4, NVMe 2.0 |
|---|---|
| Total Interface Bandwidth | 128 Gb/s |
| Form Factor | M.2 2280 |
|---|
| NAND Flash | Samsung V-NAND TLC |
|---|---|
| Drive Writes Per Day | 1 |
| Total Bytes Written | 2800 TBW |
| Sequential Read | 13000 MB/s |
|---|---|
| Sequential Write | 6500 MB/s |
| Random Read IOPS | 2500000 |
| Random Write IOPS | 250000 |
| Average Latency | 60 μs |
| Mean Time Between Failures | 2 Million Hours |
|---|---|
| Uncorrectable Bit Error Rate | 1.0×10⁻¹⁷ |
| Power Loss Protection | Yes |
| MPN | MZ-V8P2T0CW |
|---|
The Samsung 9100 PRO 4 TB (MZ-VAP4T0CW) stands out as a Gen5 workstation-class NVMe SSD, delivering up to 13,000 MB/s sequential read and 2.5M random-read IOPS from Samsung V-NAND TLC—making it a strong fit for AI data staging, large-scale content creation, and heavy scratch-disk workloads that benefit more from read concurrency than from raw write burst alone. Compared with the previous-generation MZ-V8P2T0CW, it moves to a PCIe Gen5 x4 / NVMe 2.0 platform for substantially higher host-side bandwidth and pairs that with 4 TB capacity plus 2,800 TBW endurance at 1 DWPD, giving engineers both a clear generational performance uplift and a larger sustained-write budget for long service life.
With an endurance rating of 2800 TBW, the MZ-VAP4T0CW can sustain approximately 2.8 petabytes of total host writes before reaching its rated wear limit, which is far beyond the write volume of a typical OS, boot, or general application drive. In practical terms, for common enterprise system-disk or read-heavy mixed workloads, this level of endurance supports many years of dependable use and provides comfortable write headroom for long-term deployment planning. For enterprise reliability, integrated Power Loss Protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving recovery integrity. Its UBER of 1.0E-17 indicates an extremely low probability of unrecoverable bit errors, which is an important safeguard for data consistency, application stability, and procurement confidence in business-critical environments.
1. The PCIe Gen5 x4, NVMe 2.0 architecture gives this drive the bandwidth headroom to keep next-generation GPU servers and all-flash arrays fed without turning storage into the bottleneck.
2. With up to 13 GB/s sequential read throughput, it accelerates checkpoint loading, large database scans, and high-speed analytics across multi-terabyte datasets.
3. Delivering 2.5 million random-read IOPS with 60 µs typical latency, it supports ultra-responsive OLTP, metadata-intensive AI pipelines, and latency-sensitive cloud services at scale.
4. A 1 DWPD endurance rating enables predictable full-drive rewrites every day across the warranty period, making it a strong fit for read-centric enterprise workloads with steady write pressure.
5. Samsung V-NAND TLC combines high flash density with enterprise-class efficiency and reliability, helping lower power, rack footprint, and cost per usable terabyte in large deployments.
Same-series reference capacities for MPN MZ-VAP4T0CW (4 TB) are: Lower capacity: 2 TB Higher capacity: 8 TB Capacity positioning analysis: In this SSD family, the 4 TB model is the practical sweet spot. Compared with the 2 TB version, it provides much better headroom for data growth, cache expansion, and VM density, reducing the risk of early capacity bottlenecks. Compared with the 8 TB model, it keeps acquisition cost and replacement economics more manageable while delivering essentially the same enterprise-class sequential throughput and random IOPS profile. This makes 4 TB especially well suited for mid-scale virtualization clusters, database nodes, or hyper-converged infrastructure supporting roughly 40 to 70 mixed-workload virtual machines.
Q: Is MZ-VAP4T0CW suitable for a write-heavy database server?
A: Yes, it can fit write-intensive database use if the workload stays within its 1 DWPD and 2800 TBW endurance. For very aggressive sustained writes, a higher-endurance model may be preferable.
Q: How many full drive writes per day can it actually endure over its warranty period?
A: This SSD is rated for 1 DWPD, meaning one full 4 TB drive write per day during its warranty period. Its total endurance is also specified at 2800 TBW.
Q: Does it include power loss protection (PLP) and why is that critical?
A: Yes, it includes power loss protection. PLP helps preserve in-flight data and metadata during sudden outages, reducing corruption risk and improving reliability in enterprise and database environments.
Q: What RAID level is recommended for this SSD?
A: For database or virtualization workloads, RAID 10 is typically recommended because it balances strong performance, redundancy, and low write penalty. RAID 1 is also suitable for smaller mirrored deployments.