Samsung MZ-VAP8T0 8 TB 9100 PRO PCIe Gen3 x8, NVMe 1.1 HHHL Enterprise / Data Center Mixed Use Solid State Drive

General

Brand	Samsung
Model	9100 PRO
Capacity	8 TB
Usage Class	Enterprise / Data Center Mixed Use

Interface

Host Interface	PCIe Gen3 x8, NVMe 1.1
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	HHHL

Flash & Endurance

NAND Flash	Samsung V-NAND MLC
Drive Writes Per Day	3
Total Bytes Written	43800 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2500 MB/s
Random Read IOPS	750000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-VLP3T2

Engineer's Note

Compared with the MZ-VLP3T2 generation, the MZ-VAP8T0 more than doubles usable capacity to 8 TB, delivering higher storage density with fewer drive slots while maintaining a write-intensive 3 DWPD and 43,800 TBW endurance profile. Its Samsung V-NAND MLC, up to 3,200/2,500 MB/s throughput, and 750,000/160,000 IOPS make it a stronger choice than same-class lower-endurance drives for mixed OLTP databases, dense virtualization, and high-duty cache or logging tiers where sustained write reliability is critical.

Endurance & Reliability

With an endurance rating of 43,800 TBW and 3 DWPD, the MZ-VAP8T0 is built to sustain very heavy write activity, far beyond the needs of typical OS, application, and read-centric enterprise workloads. In practical terms, for use as a system or boot drive, this level of endurance provides comfortable headroom for many years of continuous operation without endurance becoming a concern. Its enterprise-class reliability is further strengthened by power loss protection (PLP), which helps preserve in-flight data and metadata during an unexpected power interruption, reducing the risk of corruption and unplanned recovery events. An UBER of 1.0E-17, together with a 2 million hour MTBF, indicates a very low likelihood of unrecoverable read errors and supports stable, dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x8 interface with NVMe 1.1 gives this drive enough host bandwidth and command efficiency to keep database, virtualization, and analytics workloads moving without the storage bus becoming the bottleneck.
2. Its sequential read performance is well suited for data-intensive tasks such as large-scale backup restores, media streaming, and fast loading of multi-terabyte datasets in enterprise servers.
3. The exceptionally strong random read capability enables high user concurrency and faster response in OLTP databases, VDI boot storms, and heavily indexed search platforms.
4. A 3 DWPD endurance rating makes it a practical fit for write-intensive enterprise environments that require predictable lifespan under sustained daily overwrite cycles.
5. Samsung V-NAND MLC paired with very low typical latency helps deliver both stronger flash durability and consistently quick access times for latency-sensitive transactional applications.

Capacity Sweet

Lower capacity reference: 4 TB Higher capacity reference: 16 TB In this enterprise SSD family, the 8 TB model sits at the practical sweet spot. Compared with the 4 TB version, it gives meaningfully more headroom for dataset growth, VM expansion, and longer refresh cycles without increasing drive count too quickly. Compared with the 16 TB version, it typically delivers the best balance of acquisition cost, usable capacity, and performance consistency, since sequential throughput and random IOPS are usually similar across capacities. It is especially well suited for mid-scale virtualization clusters, dense database nodes, or high-ingest analytics servers.

FAQ