Samsung MZ-VAP8T0B/AM 8TB 9100 PRO NVMe PCIe Gen3 x4 AIC Enterprise Solid State Drive

General

Brand	Samsung
Model	9100 PRO
Capacity	8TB
Usage Class	Enterprise

Interface

Host Interface	NVMe PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	AIC

Flash & Endurance

NAND Flash	Samsung V-NAND 2-bit MLC
Drive Writes Per Day	3
Total Bytes Written	43800 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2300 MB/s
Random Read IOPS	750000
Random Write IOPS	110000
Average Latency	75 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-VAP8T00

Engineer's Note

Compared with the earlier MZ-VAP8T00, the MZ-VAP8T0B/AM 9100 PRO is positioned as a higher-endurance 8TB Gen3 NVMe refresh, delivering 3 DWPD and 43.8 PBW in the same legacy-friendly PCIe Gen3 x4 class. Its combination of Samsung V-NAND 2-bit MLC, 3200/2300 MB/s throughput, and up to 750,000/110,000 IOPS gives it a clear advantage over typical TLC-based peers for write-intensive caching, metadata, and mixed database workloads that demand predictable latency and long service life.

Endurance & Reliability

With an endurance rating of 43,800 TBW and 3 DWPD, this SSD is built for sustained heavy-write enterprise workloads, allowing the full drive capacity to be written three times per day across its warranty period. In practical terms, for typical OS, application, and mixed server workloads, it provides very large write headroom and can be used as a system or data drive for years without endurance concerns. For enterprise reliability, built-in power loss protection (PLP) helps preserve in-flight data and protects metadata integrity if power is interrupted unexpectedly, reducing the risk of corruption and unplanned recovery events. Its UBER of 1.0E-17, combined with a 2 million hour MTBF, reflects a high-integrity design that minimizes unrecoverable read errors and supports dependable operation in business-critical environments.

Technical Specs & Insights

1. The NVMe over PCIe Gen3 x4 architecture, paired with strong streaming bandwidth, keeps virtualization hosts and analytics nodes fed with data fast enough to shorten boot, scan, and bulk-load windows.
2. Its high random-read capability enables dense OLTP databases, metadata-heavy file systems, and VDI farms to sustain heavy parallel lookups without becoming a storage bottleneck.
3. A 3 DWPD endurance profile makes it suitable for write-intensive enterprise workloads such as logging, caching, and mixed database activity where predictable lifespan under constant daily rewrites matters.
4. Samsung V-NAND 2-bit MLC provides enterprise-class write consistency and retention, giving operators a more dependable foundation than TLC-based drives for mission-critical applications.
5. Typical latency at the tens-of-microseconds level helps reduce tail-response time, improving application responsiveness for latency-sensitive services like real-time transactions and high-concurrency cloud platforms.

Capacity Sweet

Lower capacity reference: 3.84TB Higher capacity reference: 15.36TB In this enterprise SSD family, the 8TB class sits at the sweet spot for mainstream scale-out infrastructure. Compared with 3.84TB, it gives meaningfully more headroom for VM growth, container image sprawl, log retention, and application data without forcing early drive expansion. Compared with 15.36TB, it keeps acquisition cost, rebuild exposure, and per-node storage overprovisioning under better control while delivering broadly similar enterprise performance characteristics. It is best suited for mid-density clusters, such as a virtualization node pool, a Kubernetes worker tier, or a compact all-flash database environment.

FAQ