Samsung MZ-WLR3T20 3.2 TB PM1735 PCIe Gen4 x8 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x8
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen TLC
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	6200 MB/s
Sequential Write	3000 MB/s
Random Read IOPS	1000000
Random Write IOPS	250000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLK3T2HCJR-00005

Engineer's Note

Compared with MZWLK3T2HCJR-00005, the PM1735 MZ-WLR3T20 advances to a PCIe Gen4 x8 architecture with Samsung 5th-Gen V-NAND TLC, delivering up to 6,200/3,000 MB/s and 1,000,000/250,000 IOPS for a clear generational uplift in throughput and transaction density. Its 3 DWPD endurance and 17,520 TBW at 3.2 TB make it a stronger fit for write-intensive OLTP databases, virtualization clusters, and mixed-enterprise workloads that need both sustained durability and low-latency scale.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 3 DWPD, the MZ-WLR3T20 is built for sustained write-intensive enterprise workloads over its full service life. In practical terms, this level of endurance is far beyond typical OS, boot, and general server application usage, giving buyers strong confidence that it can serve as a system drive for many years without endurance concern under normal deployment conditions. The drive also includes power-loss protection (PLP), which helps preserve in-flight data and protect mapping tables during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. Its enterprise-class UBER of 1.0E-17, together with a 2 million hour MTBF, indicates an extremely low probability of unrecoverable bit errors and supports dependable operation in mission-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x8 interface provides the bandwidth headroom needed to keep dual-socket servers and dense storage nodes from being bottlenecked during heavy data movement.
2. Its sequential read performance enables much faster loading of large databases, virtual machine images, and analytics datasets, reducing startup and recovery windows in enterprise environments.
3. The random read capability is tuned for highly concurrent workloads, helping OLTP databases, virtualization clusters, and metadata-intensive applications sustain responsive performance at scale.
4. Built with Samsung 5th-Gen V-NAND TLC and rated for 3 DWPD, this drive is well suited for write-intensive enterprise deployments that demand both strong endurance and predictable lifecycle costs.
5. The ultra-low typical latency helps deliver faster transaction response times and more consistent QoS for latency-sensitive applications such as real-time analytics and high-frequency data services.

Capacity Sweet

Lower-capacity reference: 1.6 TB Higher-capacity reference: 6.4 TB In this enterprise SSD family, the 3.2 TB model sits in the sweet spot between the 1.6 TB and 6.4 TB options. Compared with 1.6 TB, it provides much better headroom for data growth, longer refresh cycles, and denser consolidation without changing the expected enterprise-class sequential throughput or random IOPS profile. Compared with 6.4 TB, it usually delivers the best balance of acquisition cost, usable capacity, and performance consistency. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for roughly 40 to 60 virtual machines.

FAQ