Samsung MZ-XL53T20 3.2 TB PM1735 PCIe Gen4 x8 HHHL Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x8
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	HHHL

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	8000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1500000
Random Write IOPS	250000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZPLLI3T2HAJQ-00007

Engineer's Note

The Samsung PM1735 3.2TB (MZ-XL53T20) delivers a clear generational step over MZPLLI3T2HAJQ-00007 by moving to PCIe Gen4 x8 and pairing Samsung V-NAND 3D TLC with up to 8,000/3,800 MB/s and 1.5M/250K IOPS, giving latency-sensitive enterprise workloads materially more throughput headroom. With 3 DWPD and 17,520 TBW, this model is especially well suited for write-intensive database, virtualization, and mixed OLTP analytics environments that need both sustained endurance and higher parallel performance than the prior generation.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 3 DWPD, the MZ-XL53T20 is built for sustained heavy write workloads over its service life. In typical enterprise use, this level of endurance means it can comfortably serve as a high-write system or application drive for many years, providing strong long-term write reliability with ample margin for daily operations. For enterprise reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and protect metadata integrity during unexpected power interruptions. Its UBER of 1.0E-17 and 2 million-hour MTBF indicate a very low rate of unrecoverable bit errors and a high expected reliability level, giving procurement teams added confidence for business-critical deployments.

Technical Specs & Insights

1. The PCIe Gen4 x8 interface provides the bandwidth headroom needed to keep multi-core servers and data-intensive applications fed without creating a storage bottleneck.
2. Its sequential read performance enables dramatically faster loading of large databases, virtual machine images, and AI training datasets in enterprise environments.
3. The high random read capability is ideal for latency-sensitive workloads such as OLTP databases, large-scale virtualization, and real-time analytics with massive parallel access.
4. Built with Samsung V-NAND 3D TLC and rated for 3 DWPD, it balances enterprise-class flash efficiency with the write endurance required for sustained mixed-workload deployment.
5. The typical 90 µs latency helps accelerate transaction response times and maintain predictable QoS for mission-critical applications under heavy load.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB Capacity positioning analysis: At 3.2 TB, the MZ-XL53T20 sits at the sweet spot of the series. Compared with the 1.6 TB model, it gives much better headroom for VM growth, log retention, and mixed application datasets without changing the expected enterprise-class read/write and IOPS profile. Compared with the 6.4 TB option, it delivers a more balanced cost-per-drive while still offering ample usable capacity and consistent performance. This makes it especially well suited for mid-sized virtualization clusters, such as hosting boot and application volumes for about 40 to 60 virtual machines.

FAQ