Samsung MZ7M34T0HALC 4 TB 870 QVO SATA 6Gb/s 2.5 inch Client Solid State Drive

General

Brand	Samsung
Model	870 QVO
Capacity	4 TB
Usage Class	Client

Interface

Host Interface	SATA 6Gb/s
Total Interface Bandwidth	6 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 4-bit QLC
Drive Writes Per Day	0.25
Total Bytes Written	1440 TBW

Performance

Sequential Read	560 MB/s
Sequential Write	530 MB/s
Random Read IOPS	98000
Random Write IOPS	88000
Average Latency	130 μs

Reliability

Mean Time Between Failures	1.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	No

Part Number

MPN	MZ-76Q4T0BW

Engineer's Note

Compared with the MZ-76Q4T0BW, the MZ7M34T0HALC 870 QVO advances Samsung’s 4TB SATA QLC platform with higher peak sequential performance at 560/530 MB/s and up to 98,000/88,000 IOPS, making it a stronger fit for capacity-dense read-centric tiers and large media or backup datasets. Its 1,440 TBW endurance at 0.25 DWPD, combined with Samsung V-NAND 4-bit QLC, delivers a better balance of usable flash capacity, client-SATA saturation, and lifecycle value than the previous-generation part.

Endurance & Reliability

With an endurance rating of 1440 TBW and 0.25 DWPD, this SSD is well suited for read-intensive and mixed everyday workloads, allowing a very large amount of data to be written over its service life before wear becomes a concern. In practical terms, for typical OS, application, and light business data usage, it can comfortably serve as a system or boot drive for many years without endurance-related concern. An UBER of 1.0E-15 means the drive is designed to deliver a very low rate of uncorrectable read errors, which supports dependable data access in business environments. This model does not include power-loss protection, so it is best deployed in systems with stable power, UPS coverage, or non-cache-critical workloads where sudden power interruption is well controlled.

Technical Specs & Insights

1. The SATA interface paired with near-bus-limit sequential read performance makes this drive a practical drop-in upgrade for legacy enterprise servers and storage arrays that need faster boot, restore, and bulk data access without moving to NVMe.
2. Its strong random read capability supports read-heavy virtualization, database, and content-delivery workloads by serving large volumes of small requests with consistent responsiveness.
3. The endurance rating is best suited to mostly read-oriented enterprise deployments such as boot volumes, media repositories, reference datasets, and scale-out cold storage where write pressure remains moderate.
4. Samsung’s V-NAND QLC architecture enables higher flash density and better cost efficiency, making it attractive for capacity-focused data center tiers that prioritize dollars per terabyte over sustained write intensity.
5. Low typical read latency helps reduce application wait time, improving user experience in transaction lookup, metadata access, and other latency-sensitive read paths.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB Capacity positioning analysis: In this Samsung enterprise SSD family, the 4 TB model sits in a practical sweet spot. Compared with the 1.92 TB version, it provides much better headroom for data growth, denser VM placement, and fewer drive slots consumed at the same performance class. Compared with the 7.68 TB option, it typically delivers the best balance of acquisition cost, usable capacity, and predictable enterprise performance without overcommitting budget to unused space. It is especially well suited for mid-scale virtualization clusters, database nodes, and high-availability application servers.

FAQ