Samsung MZQLB1T9HAJR 1.92 TB PM983 PCIe Gen3 x4 U.2 Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	8 Gb/s

Physical Dimension

Form Factor	U.2

Flash & Endurance

NAND Flash	Samsung V-NAND 64-layer 3D TLC
Drive Writes Per Day	1.3
Total Bytes Written	2733 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2000 MB/s
Random Read IOPS	540000
Random Write IOPS	40000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-ILS480N

Engineer's Note

Compared with the MZ-ILS480N, the PM983 MZQLB1T9HAJR delivers a clear generational upgrade in both density and performance, moving to 1.92 TB NVMe on PCIe Gen3 x4 and reaching up to 3,200/2,000 MB/s with 540,000/40,000 IOPS. Its 64-layer Samsung V-NAND TLC, 1.3 DWPD endurance, and 2,733 TBW make it a strong fit for read-intensive to mixed cloud, virtualization, and scale-out storage workloads that need higher throughput per drive without sacrificing enterprise-class write life.

Endurance & Reliability

With an endurance rating of 2,733 TBW and 1.3 DWPD, the MZQLB1T9HAJR is designed to handle substantial write activity over its service life, making it well suited for demanding enterprise and mixed-workload environments. In typical deployment as a boot, system, or general server drive, this level of endurance translates into many years of reliable operation without write wear being a practical concern. For enterprise reliability, the drive includes power loss protection (PLP), which helps preserve in-flight data and protect metadata integrity in the event of an unexpected power interruption. Its UBER of 1.0E-17 indicates an extremely low probability of unrecoverable bit errors, supporting strong data integrity expectations for business-critical storage environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface, paired with 3200 MB/s sequential read performance, accelerates OS boot, VM provisioning, and large dataset streaming in latency-sensitive enterprise servers.
2. With 540,000 K IOPS in random reads, this drive sustains fast metadata access and consistent responsiveness for virtualized databases, OLTP workloads, and high-concurrency cloud environments.
3. Rated at 1.3 DWPD, it provides the write endurance enterprises need for mixed-use deployments, enabling reliable daily overwrites across its warranty life without premature wear concerns.
4. Built on Samsung V-NAND 64-layer 3D TLC, it balances density, power efficiency, and cost, making it well suited for scaling enterprise flash capacity while maintaining dependable performance.
5. A typical latency of 85 µs helps reduce storage wait time, improving transaction speed and application QoS for real-time analytics, caching tiers, and performance-critical workloads.

Capacity Sweet

Lower-capacity reference: 960 GB Higher-capacity reference: 3.84 TB In this series, the 1.92 TB model sits at the sweet spot for mainstream enterprise deployments. Compared with the 960 GB version, it gives much better headroom for OS images, application growth, logs, and overprovisioning, reducing the risk of early capacity pressure. Compared with the 3.84 TB option, it usually delivers the best balance of acquisition cost, usable capacity, and broadly similar enterprise read/write and random IOPS behavior. It is especially well suited for mid-sized virtualization clusters, such as shared boot and application storage for about 40 to 60 virtual machines.

FAQ